CLADDING STRUCTURE IN THE BACK END OF LINE OF PHOTONICS CHIPS

    公开(公告)号:US20230393340A1

    公开(公告)日:2023-12-07

    申请号:US17805686

    申请日:2022-06-06

    CPC classification number: G02B6/30 G02B6/132

    Abstract: IC chips for photonics applications are disclosed. An example IC chip includes a substrate, an optical component above the substrate, and a first connection level above the substrate. The first connection level includes the optical component and a first cladding structure, in which the optical component is covered by the first cladding structure. The IC chip also includes a second connection level on the first connection level. The second connection level includes a first interlayer dielectric material. The IC chip further includes a second cladding structure directly above the optical component. The second cladding structure has at least a section within the second connection level. The second cladding structure is on the first cladding structure. The second cladding structure is laterally adjacent to and in direct contact with the first interlayer dielectric material. The second cladding structure includes a material different from the first interlayer dielectric material.

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