公开(公告)号：US20240128328A1

公开(公告)日：2024-04-18

申请号：US17964356

申请日：2022-10-12

Applicant: GlobalFoundries U.S. Inc.

Inventor： Michael J. ZIERAK ,  Steven J. BENTLEY ,  Santosh SHARMA ,  Mark D. LEVY ,  Johnatan A. KANTAROVSKY

IPC: H01L29/40 ,  H01L29/20 ,  H01L29/66 ,  H01L29/778

CPC classification number: H01L29/402 ,  H01L29/2003 ,  H01L29/6656 ,  H01L29/7786

Abstract: The present disclosure relates to a structure which includes at least one gate structure over semiconductor material, the at least one gate structure comprising an active layer, a gate metal extending from the active layer and a sidewall spacer on sidewalls of the gate metal, and a field plate aligned with the at least one gate structure and isolated from the gate metal by the sidewall spacer.

公开(公告)号：US20240194680A1

公开(公告)日：2024-06-13

申请号：US18078425

申请日：2022-12-09

Applicant: GlobalFoundries U.S. Inc.

Inventor： Santosh SHARMA ,  Michael J. ZIERAK ,  Mark D. LEVY ,  Steven J. BENTLEY

IPC: H01L27/095 ,  H01L21/8252 ,  H01L29/20 ,  H01L29/205 ,  H01L29/40 ,  H01L29/66 ,  H01L29/778

CPC classification number: H01L27/095 ,  H01L21/8252 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/402 ,  H01L29/66462 ,  H01L29/7786

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a bidirectional device, methods of manufacture and methods of operation. The structure includes: a first gate structure adjacent to a first source region; a second gate structure adjacent to a second source region; and field plates adjacent to the first gate structure, the second gate structure and a surface of an active layer of the first gate structure and the second gate structure.

公开(公告)号：US20250040221A1

公开(公告)日：2025-01-30

申请号：US18226982

申请日：2023-07-27

Applicant: GlobalFoundries U.S. Inc.

Inventor： Johnatan A. KANTAROVSKY ,  Mark D. LEVY ,  Alvin J. JOSEPH ,  Santosh SHARMA ,  Michael J. ZIERAK

IPC: H01L29/40 ,  H01L29/20 ,  H01L29/423 ,  H01L29/66 ,  H01L29/778

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a high-electron-mobility transistor and methods of manufacture. The structure includes: a gate structure; a first field plate on a first side of the gate structure; and a second field plate on a second side of the gate structure, independent from the first field plate.

公开(公告)号：US20240186384A1

公开(公告)日：2024-06-06

申请号：US18075930

申请日：2022-12-06

Applicant: GlobalFoundries U.S. Inc.

Inventor： Santosh SHARMA ,  Michael J. ZIERAK ,  Steven J. BENTLEY ,  Mark D. LEVY

IPC: H01L29/40 ,  H01L29/20 ,  H01L29/205 ,  H01L29/66 ,  H01L29/778

CPC classification number: H01L29/402 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/401 ,  H01L29/66462 ,  H01L29/7786

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a high-electron-mobility transistor (HEMT) and methods of manufacture. The structure includes: a gate structure; a source contact and a drain contact adjacent to the gate structure; and a field plate electrically isolated from the gate structure and abutting the source contact and the drain contact.