公开(公告)号：US20240038882A1

公开(公告)日：2024-02-01

申请号：US18487115

申请日：2023-10-15

Applicant: GlobalFoundries U.S. Inc.

Inventor： VIBHOR JAIN ,  JOHNATAN AVRAHAM KANTAROVSKY ,  MARK DAVID LEVY ,  EPHREM GEBRESELASIE ,  YVES NGU ,  SIVA P. ADUSUMILLI

IPC: H01L29/778 ,  H01L29/40 ,  H01L29/66 ,  H01L29/49 ,  H01L29/43

CPC classification number: H01L29/7781 ,  H01L29/407 ,  H01L29/66431 ,  H01L29/4916 ,  H01L29/4983 ,  H01L29/435

Abstract: The present disclosure relates generally to structures in semiconductor devices and methods of forming the same. More particularly, the present disclosure relates to high electron mobility transistor (HEMT) devices having a silicided polysilicon layer. The present disclosure may provide an active region above a substrate, source and drain electrodes in contact with the active region, a gate above the active region, the gate being laterally between the source and drain electrodes, a polysilicon layer above the substrate, and a silicide layer on the polysilicon layer. The active region includes at least two material layers with different band gaps. The polysilicon layer may be configured as an electronic fuse, a resistor, or a diode.

公开(公告)号：US20240038881A1

公开(公告)日：2024-02-01

申请号：US18487114

申请日：2023-10-15

Applicant: GlobalFoundries U.S. Inc.

Inventor： VIBHOR JAIN ,  JOHNATAN AVRAHAM KANTAROVSKY ,  MARK DAVID LEVY ,  EPHREM GEBRESELASIE ,  YVES NGU ,  SIVA P. ADUSUMILLI

IPC: H01L29/778 ,  H01L29/40 ,  H01L29/66 ,  H01L29/49 ,  H01L29/43

CPC classification number: H01L29/7781 ,  H01L29/407 ,  H01L29/66431 ,  H01L29/4916 ,  H01L29/4983 ,  H01L29/435

Abstract: The present disclosure relates generally to structures in semiconductor devices and methods of forming the same. More particularly, the present disclosure relates to high electron mobility transistor (HEMT) devices having a silicided polysilicon layer. The present disclosure may provide an active region above a substrate, source and drain electrodes in contact with the active region, a gate above the active region, the gate being laterally between the source and drain electrodes, a polysilicon layer above the substrate, and a silicide layer on the polysilicon layer. The active region includes at least two material layers with different band gaps. The polysilicon layer may be configured as an electronic fuse, a resistor, or a diode.

公开(公告)号：US20230124962A1

公开(公告)日：2023-04-20

申请号：US17503345

申请日：2021-10-17

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： VIBHOR JAIN ,  JOHNATAN AVRAHAM KANTAROVSKY ,  MARK DAVID LEVY ,  EPHREM GEBRESELASIE ,  YVES NGU ,  SIVA P. ADUSUMILLI

IPC: H01L29/778 ,  H01L29/40 ,  H01L29/43 ,  H01L29/49 ,  H01L29/66

Abstract: The present disclosure relates generally to structures in semiconductor devices and methods of forming the same. More particularly, the present disclosure relates to high electron mobility transistor (HEMT) devices having a silicided polysilicon layer. The present disclosure may provide an active region above a substrate, source and drain electrodes in contact with the active region, a gate above the active region, the gate being laterally between the source and drain electrodes, a polysilicon layer above the substrate, and a silicide layer on the polysilicon layer. The active region includes at least two material layers with different band gaps. The polysilicon layer may be configured as an electronic fuse, a resistor, or a diode.