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公开(公告)号：US20240218562A1
公开(公告)日：2024-07-04
申请号：US18398449
申请日：2023-12-28
发明人： Manabu Hamano
CPC分类号： C30B25/165 , C30B25/10 , C30B25/12 , C30B25/14 , C30B25/186 , H01L21/02532 , H01L21/0262 , C30B29/06
摘要： A method of processing semiconductor wafers includes placing a semiconductor wafer in a recess of a susceptor within a heated chamber. The recess is defined in the susceptor by a downwardly depending sidewall. The method also includes determining a distance of a peripheral edge of the wafer from the sidewall. The method also includes supplying a first process gas into the heated chamber at a first gas flow rate and a second process gas into the heated chamber at a second gas flow rate, and supplying heat to the heated chamber. The method also includes modulating the first gas flow rate, the second gas flow rate, and/or the heat supplied to the heated chamber to control a deposition rate of the first and second process gases near the peripheral edge of the wafer based on the determined distance of the peripheral edge of the wafer from the sidewall.
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公开(公告)号：US12084770B2
公开(公告)日：2024-09-10
申请号：US17400722
申请日：2021-08-12
发明人： Chun-Chin Tu , Manabu Hamano , Lunghsing Hsu
IPC分类号： C23C16/48 , C23C16/458 , C23C16/52
CPC分类号： C23C16/488 , C23C16/458 , C23C16/52
摘要： A system for depositing a layer on a substrate includes a processing chamber defining a gas inlet for introducing gas into the processing chamber and a gas outlet to allow the gas to exit the processing chamber. A substrate support is positioned within the processing chamber and is configured to receive a substrate. A transparent upper window includes a convex first face spaced from the substrate support to define an air gap therebetween. The upper window is positioned within the processing chamber to direct the gas from the gas inlet, through the air gap, and to the gas outlet. The first face includes a radially outer surface and a radially inner surface circumscribed within the outer surface. The outer surface has a first radius of curvature and the inner surface has a second radius of curvature that is different from the first radius of curvature.
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公开(公告)号：US20240006225A1
公开(公告)日：2024-01-04
申请号：US18327546
申请日：2023-06-01
发明人： Manabu Hamano , Chun-Chin Tu
IPC分类号： H01L21/687 , C30B25/12
CPC分类号： H01L21/68735 , C30B25/12
摘要： A susceptor for supporting a semiconductor wafer in a heated chamber includes a body that has a front surface, a rear surface, and a central plane between the front and rear surfaces. The susceptor also includes a recess that extends into the body from the front surface to a recess floor and a ledge that circumscribes the recess floor in the recess. The ledge includes a first surface oriented at a first angle relative to a horizontal plane parallel to the central plane, a second surface that extends radially inward from the first surface, the second surface optionally oriented at a second acute angle relative to the horizontal plane, and a third surface that extends between the second surface and the recess floor, the third surface oriented at a third acute angle relative to the horizontal plane. Each of the first, second, and third surfaces extends circumferentially along the ledge.
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公开(公告)号：US20220056583A1
公开(公告)日：2022-02-24
申请号：US17400722
申请日：2021-08-12
发明人： Chun-Chin Tu , Manabu Hamano , Lunghsing Hsu
IPC分类号： C23C16/48 , C23C16/52 , C23C16/458
摘要： A system for depositing a layer on a substrate includes a processing chamber defining a gas inlet for introducing gas into the processing chamber and a gas outlet to allow the gas to exit the processing chamber. A substrate support is positioned within the processing chamber and is configured to receive a substrate. A transparent upper window includes a convex first face spaced from the substrate support to define an air gap therebetween. The upper window is positioned within the processing chamber to direct the gas from the gas inlet, through the air gap, and to the gas outlet. The first face includes a radially outer surface and a radially inner surface circumscribed within the outer surface. The outer surface has a first radius of curvature and the inner surface has a second radius of curvature that is different from the first radius of curvature.
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