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公开(公告)号：US20170207365A1
公开(公告)日：2017-07-20
申请号：US15001951
申请日：2016-01-20
Applicant: Google Inc.
Inventor： Michael Grundmann , Martin F. Schubert
CPC classification number: H01L33/145 , H01L33/007 , H01L33/0079 , H01L33/06 , H01L33/32 , H01L33/42
Abstract: An apparatus includes a p-type semiconductor material, an n-type semiconductor material, and an active region disposed between the p-type semiconductor material and the n-type semiconductor material. The active region emits light in response to a voltage applied across the active region, and the active region includes a quantum well region, a barrier region, and a capping region. The barrier region is disposed to confine charge carriers in the quantum well region. The capping region is disposed between the quantum well region and the barrier region, and the capping region is adjacent to the quantum well region to stabilize a material composition of the quantum well region. The quantum well region, the barrier region, and the capping region collectively form a first tri-layer structure.
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公开(公告)号：US20170213934A1
公开(公告)日：2017-07-27
申请号：US15005872
申请日：2016-01-25
Applicant: Google Inc.
Inventor： Michael Grundmann , Martin F. Schubert
CPC classification number: H01L33/0025 , H01L27/156 , H01L33/0062 , H01L33/24 , H01L33/30 , H01L33/42 , H01L2933/0016
Abstract: A light emitting diode (LED) includes a semiconductor material with an active region. The active region is disposed in the semiconductor material to produce light in response to a voltage applied across the semiconductor material. The active region includes a wide bandgap region disposed to inhibit charge transfer from a central region of the LED to the lateral edges of the LED. The active region also includes a narrow bandgap region disposed in the central region with the wide bandgap region disposed about the narrow bandgap region, and the narrow bandgap region has a narrower bandgap than the wide bandgap region.
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