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公开(公告)号:US20240396194A1
公开(公告)日:2024-11-28
申请号:US18202870
申请日:2023-05-26
Applicant: Google LLC
Inventor: George Earl Grant Sterling , Michael C. Hamilton , Lev Ioffe , Charles Neill
IPC: H01P1/20
Abstract: A microwave filter includes a multilayer stack. The multilayer stack includes one or more first-type layers composed of a first superconductor material having a first superconducting critical temperature; and one or more second-type layers composed of a non-superconductor metal or a second superconductor material having a second superconducting critical temperature that is lower than the first superconducting critical temperature. The multilayer stack is configured to behave as a dissipative metal for photons having a frequency above twice a superconducting gap frequency of the multilayer stack and to behave as a superconductor for photons having a frequency below twice the superconducting gap frequency of the multilayer stack.
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公开(公告)号:US20240194661A1
公开(公告)日:2024-06-13
申请号:US18080729
申请日:2022-12-13
Applicant: Google LLC
Inventor: Zhimin Jamie Yao , Michael C. Hamilton , Marissa Giustina , Brian James Burkett , Theodore Charles White , Ofer Naaman
CPC classification number: H01L25/50 , H01L24/81 , H01L24/13 , H01L2224/13109 , H01L2224/81815
Abstract: A method includes providing a first chip having a circuit element layer stack, the circuit element layer stack including a plurality of circuit elements distributed across a plurality of layers. The circuit element layer stack has a sacrificial material filling a space between the plurality of circuit elements in the plurality of layers and a coherent device layer disposed on the circuit element layer stack. The method includes removing the sacrificial material.
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公开(公告)号:US20240194532A1
公开(公告)日:2024-06-13
申请号:US18080715
申请日:2022-12-13
Applicant: Google LLC
Inventor: Zhimin Jamie Yao , Michael C. Hamilton , Marissa Giustina , Brian James Burkett , Theodore Charles White , Ofer Naaman
IPC: H01L21/822 , H01L21/02 , H01L21/311 , H01L21/768 , H01L23/00 , H01L25/07
CPC classification number: H01L21/8221 , H01L21/02505 , H01L21/02598 , H01L21/31127 , H01L21/7688 , H01L24/16 , H01L24/29 , H01L25/074 , B82Y10/00
Abstract: A method includes providing a first chip having a circuit element layer stack, the circuit element layer stack including a plurality of circuit elements distributed across a plurality of layers. The circuit element layer stack has a sacrificial material filling a space between the plurality of circuit elements in the plurality of layers and a coherent device layer disposed on the circuit element layer stack. The method includes removing the sacrificial material.
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