GROUP 11 MONO-METALLIC PRECURSOR COMPOUNDS AND USE THEREOF IN METAL DEPOSITION
    1.
    发明申请
    GROUP 11 MONO-METALLIC PRECURSOR COMPOUNDS AND USE THEREOF IN METAL DEPOSITION 审中-公开
    11组单金属前体化合物及其在金属沉积中的应用

    公开(公告)号:US20170073361A1

    公开(公告)日:2017-03-16

    申请号:US15274997

    申请日:2016-09-23

    Abstract: The present application provides precursor compounds useful for deposition of a group 11 metal on a substrate, for example, a microelectronic device substrate, as well as methods of synthesizing such precursor compounds. The precursor compounds provided are mono-metallic compounds comprising a diaminocarbene (DAC) having the general formula: “DAC-M-X”, where the diaminocarbene is an optionally substituted, saturated N-heterocyclic diaminocarbene (sNHC) or an optionally substituted acyclic diaminocarbene, M is a group 11 metal, such as copper, silver or gold; and X is an anionic ligand. Also provided are methods of synthesizing the precursor compounds, metal deposition methods utilizing such precursor compounds, and to composite materials, such as, e.g., microelectronic device structures, and products formed by use of such precursors and deposition methods.

    Abstract translation: 本申请提供了可用于在基底上沉积11族金属的前体化合物,例如微电子器件底物,以及合成这些前体化合物的方法。 所提供的前体化合物是包含具有以下通式的二氨基卡宾(DAC)的单金属化合物:DAC-MX,其中二氨基碳烯是任选取代的饱和N-杂环二氨基卡宾(sNHC)或任选取代的非环状二氨基碳烯,M 是一组11金属,如铜,银或金; X是阴离子配体。 还提供了合成前体化合物的方法,利用这种前体化合物的金属沉积方法以及复合材料,例如微电子器件结构,以及通过使用这些前体形成的产物和沉积方法。

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