公开(公告)号：US5640043A

公开(公告)日：1997-06-17

申请号：US580071

申请日：1995-12-20

申请人： Jack Eng ,  Joseph Chan ,  Lawrence Laterza ,  Gregory Zakaluk ,  Jun Wu ,  John Amato ,  Dennis Garbis ,  Willem Einthoven

发明人： Jack Eng ,  Joseph Chan ,  Lawrence Laterza ,  Gregory Zakaluk ,  Jun Wu ,  John Amato ,  Dennis Garbis ,  Willem Einthoven

IPC分类号： H01L21/205 ,  H01L29/165 ,  H01L29/861 ,  H01L29/06 ,  H01L27/082

CPC分类号： H01L29/165 ,  H01L29/8613

摘要： A high voltage silicon rectifier includes a substrate portion and an epitaxial mesa portion that is a frustrum of a pyramid with a substantially square cross section and side walls that make a forty five degree angle with the substrate portion. The mesa portion includes three germanium doped layers that introduce strain to speed up recombination of charge carriers. The topography of the base region of the rectifier has a high-low junction that includes a central portion that is deeper in the mesa than the germanium-doped layers and an edge portion that is shallower in the mesa than the germanium-doped layers and forms a positive bevel angle with the tapered side walls of the mesa,

摘要翻译： 高压硅整流器包括基板部分和外延台面部分，该外延台面部分是具有基本上正方形横截面的金字塔的棱角，并且与基板部分成四十五度的角。 台面部分包括三个锗掺杂层，其引入应变以加速电荷载体的复合。 整流器的基极区域的形貌具有高低结，其包括在台面比锗掺杂层更深的中心部分和在台面比锗掺杂层更浅的边缘部分 与台面的锥形侧壁呈正斜角，

公开(公告)号：US5635414A

公开(公告)日：1997-06-03

申请号：US409762

申请日：1995-03-28

申请人： Gregory Zakaluk ,  Dennis Garbis ,  Willem Einthoven ,  Joseph Chan ,  Jack Eng ,  Jun Wu ,  John Amato

发明人： Gregory Zakaluk ,  Dennis Garbis ,  Willem Einthoven ,  Joseph Chan ,  Jack Eng ,  Jun Wu ,  John Amato

IPC分类号： H01L21/20 ,  H01L21/285 ,  H01L21/322 ,  H01L21/265

CPC分类号： H01L21/28537 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02658 ,  H01L21/3221 ,  Y10S438/974

摘要： Significant reduction in the cost of fabrication of shallow junction, Schottky or similar semiconductor devices without sacrifice of functional characteristics, while at the same time achieving the advantages is achieved, after the non-polishing cleaning step is essentially performed, by subjecting the substrate to conditions which move disadvantageous factors within said substrate into a space substantially at said surface, followed by substantially removing said factor-containing space from said substrate chemical removal step, followed etching and vapor deposition steps. Although these new steps add time, and therefore cost, to the overall process, the devices under discussion when produced by known industry processes require yet more time, and involve yet more expense, so that the total process represents a substantial reduction in the cost of their manufacture while producing devices which are the equivalent or superior in electrical performance to such devices which are made by known industry processes.

摘要翻译： 在不牺牲功能特性的情况下显着降低了制造浅结，肖特基或类似半导体器件的成本，同时实现了在基本上执行非抛光清洁步骤之后，通过使基板经受条件 其将所述衬底内的不利因素移动到基本上位于所述表面的空间中，然后在蚀刻和气相沉积步骤之后基本上从所述衬底化学品去除步骤中除去所述含因子空间。 虽然这些新的步骤为整个过程增加了时间，因此增加了成本，但由已知行业流程生产的正在讨论的设备需要更多的时间，并且涉及更多的费用，因此整个过程将大大降低成本 它们的制造同时生产与通过已知工业方法制造的这种装置相当或优越的电气性能的装置。

公开(公告)号：US5371647A

公开(公告)日：1994-12-06

申请号：US917778

申请日：1992-07-21

申请人： Robert L. Fried ,  Lou Schilling ,  Willem Einthoven ,  Muni Mitchell

发明人： Robert L. Fried ,  Lou Schilling ,  Willem Einthoven ,  Muni Mitchell

IPC分类号： H01T4/06 ,  H02H3/22

CPC分类号： H01T4/06

摘要： Sets of six steering diodes and an ungated Thyristor are simultaneously formed into surge protection circuit modules by mass production techniques. An extended lead frame is provided with three spaced parallel leads for each module. The leads are connected at one end by a bridge. The sets of components are arranged along the lead frame in a fixture. By heating, each lead is soldered between a pair of steering diodes and the steering diodes on each side of the lead frame are soldered to different conductive plates. A thyristor is soldered between the plates. The partially formed modules are removed as a unit from the fixture and may be encased simultaneously. The bridge is removed to separate the modules and the leads trimmed and bent as required.

摘要翻译： 六个转向二极管和一个非门控晶闸管的组合通过大量生产技术同时形成浪涌保护电路模块。 延伸的引线框架为每个模块提供三个间隔开的平行引线。 引线在一端通过桥连接。 这些组件沿着引线框架设置在固定装置中。 通过加热，每个引线焊接在一对转向二极管之间，并且引线框架的每一侧的转向二极管焊接到不同的导电板上。 板之间焊接晶闸管。 部分形成的模块作为一个单元从夹具中移除并且可以被同时封装。 拆除桥梁以分离模块，根据需要修剪和弯曲导线。