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公开(公告)号：US20190058073A1
公开(公告)日：2019-02-21
申请号：US16100457
申请日：2018-08-10
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Hiroyasu FUJIWARA , Wei DONG , Kazutoshi NAKAJIMA , Shohei HAYASHI
IPC: H01L31/108 , H01L31/07 , H01L31/0352 , H01L31/0232 , H01L31/101
Abstract: A photodetection element is a photodetection element having an incidence surface for light on a back surface of a semiconductor layer, and includes a periodic nano-concave/convex structure provided on a front surface of the semiconductor layer and having convex portions and concave portions constituting a longitudinal resonator and a transverse resonator for the light incident from the incidence surface, the periodic nano-concave/convex structure converting the light into surface plasmons, and a metal film provided to cover the periodic nano-concave/convex structure, a height and an arrangement pitch of the convex portions in the periodic nano-concave/convex structure are set such that a resonance wavelength of the longitudinal resonator and a resonance wavelength of the transverse resonator match, and a thickness of the metal film is equal to or greater than 20 nm.
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公开(公告)号：US20210194144A1
公开(公告)日：2021-06-24
申请号：US17120885
申请日：2020-12-14
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Shohei HAYASHI , Tetsushi SHIMOMURA , Hiroyasu FUJIWARA
Abstract: A terahertz wave lens concentrates or collimates a terahertz wave. The terahertz wave lens includes a substrate having a surface provided with an uneven structure that changes a phase of the terahertz wave. The uneven structure includes a plurality of pillars that are periodically arranged. The uneven structure includes a plurality of regions where the plurality of pillars are arranged. A height of the pillar in a thickness direction of the substrate and a width of the pillar differ for each of the regions. A distance (period) between centers of the pillars adjacent to each other is constant. Outer end portions of the uneven structure in the thickness direction are located on the same plane.
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公开(公告)号：US20240194816A1
公开(公告)日：2024-06-13
申请号：US18529176
申请日：2023-12-05
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Kazutoshi NAKAJIMA , Wei DONG , Hiroyasu FUJIWARA
IPC: H01L31/108 , H01L31/18
CPC classification number: H01L31/1085 , H01L31/1804
Abstract: A method of manufacturing an optical detection element includes: a first process of forming an amorphous semiconductor layer on a support; a second process of forming a first metal layer on the semiconductor layer; a third process of carrying out a heat treatment so that the semiconductor layer is polycrystallized and the semiconductor layer and the first metal layer are interchanged with each other, thereby forming the first metal layer on the support and forming a polycrystalline photoelectric conversion layer on the first metal layer; and a fourth process of forming a second metal layer on the photoelectric conversion layer. In the fourth process, the second metal layer is formed so that a width of the second metal layer becomes a width with which surface plasmon resonance occurs due to incidence of light in a predetermined wavelength region.
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公开(公告)号：US20240105870A1
公开(公告)日：2024-03-28
申请号：US18371606
申请日：2023-09-22
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Kazutoshi NAKAJIMA , Hiroyasu FUJIWARA , Wei DONG
IPC: H01L31/0368 , H01L31/0224 , H01L31/109 , H01L31/18
CPC classification number: H01L31/03682 , H01L31/022416 , H01L31/109 , H01L31/1812
Abstract: A photodetection element includes an N-type silicon layer formed in a single crystal state, a P-type germanium-containing layer formed in a polycrystal state and forming a hetero PN junction between the germanium-containing layer and the silicon layer, a first electrode electrically connected to the silicon layer, and a second electrode electrically connected to the germanium-containing layer.
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Patent Agency Ranking
5.发明公开公开(公告)号：US20230324591A1
公开(公告)日：2023-10-12
申请号：US18209718
申请日：2023-06-14
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Shohei HAYASHI , Tetsushi SHIMOMURA , Hiroyasu FUJIWARA
CPC classification number: G02B5/1871 , G02F1/39 , G02B27/0025 , G02B3/08 , G02B5/1857 , G02B5/1876 , G02F2203/13 , G02B5/1809
Abstract: A terahertz wave lens includes a substrate having a surface provided with an uneven structure that changes a phase of the terahertz wave. The uneven structure includes a plurality of holes that are periodically arranged. The uneven structure includes a plurality of regions where the plurality of holes are arranged. A height of the hole in a thickness direction of the substrate and a width of the pillar differ for each of the regions. Outer end portions of the uneven structure in the thickness direction are located on the same plane.
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公开(公告)号：US20220209505A1
公开(公告)日：2022-06-30
申请号：US17608225
申请日：2020-12-16
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Kazuue FUJITA , Shohei HAYASHI , Hiroyasu FUJIWARA , Atsushi NAKANISHI , Akio ITO , Tatsuo DOUGAKIUCHI
Abstract: A laser module including a quantum cascade laser that includes a substrate having a main surface, a first clad layer provided on the main surface, an active layer provided on the first clad layer, and a second clad layer provided on the active layer, and a lens that has a lens plane disposed at a position facing the end surface of the active layer. An end surface of the active layer constitutes a resonator that causes light of a first frequency and light of a second frequency to oscillate, and the active layer is configured to generate a terahertz wave of a differential frequency between the first frequency and the second frequency. The substrate is in direct contact or indirect contact with the lens plane, and the end surface of the active layer is inclined with respect to a portion facing the end surface in the lens plane.
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公开(公告)号：US20210191231A1
公开(公告)日：2021-06-24
申请号：US17116189
申请日：2020-12-09
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Shohei HAYASHI , Tetsushi SHIMOMURA , Hiroyasu FUJIWARA
Abstract: A terahertz wave lens includes a substrate having a surface provided with an uneven structure that changes a phase of the terahertz wave. The uneven structure includes a plurality of holes that are periodically arranged. The uneven structure includes a plurality of regions where the plurality of holes are arranged. A height of the hole in a thickness direction of the substrate and a width of the pillar differ for each of the regions. Outer end portions of the uneven structure in the thickness direction are located on the same plane.
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公开(公告)号：US20190296176A1
公开(公告)日：2019-09-26
申请号：US16353112
申请日：2019-03-14
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Wei DONG , Hiroyasu FUJIWARA
IPC: H01L31/108
Abstract: A photodetector element according to an aspect of the present disclosure includes a semiconductor layer with an uneven structure on one surface side that is constituted of projection portions and recess portions, and converts light into surface plasmons, and a metal film that is provided on the one surface side of the semiconductor layer in a manner corresponding to the uneven structure and a Schottky junction is formed between the metal film and the semiconductor layer. The semiconductor layer is constituted of n-type conductive silicon, and the other surface side of the semiconductor layer serves as an incident surface for light. The metal film is constituted of a material including nickel which form the Schottky junction when combined with the semiconductor layer.
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公开(公告)号：US20190074396A1
公开(公告)日：2019-03-07
申请号：US16114360
申请日：2018-08-28
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Wei DONG , Hiroyasu FUJIWARA , Kazutoshi NAKAJIMA
IPC: H01L31/108 , H01L31/0232 , G02B6/122 , H01L31/0224
Abstract: A photodetection element includes a semiconductor layer having, on one surface side, a periodic concave/convex structure that includes periodic convex portions and concave portions and converts light into surface plasmon, and a metal film provided on the one surface side of the semiconductor layer in correspondence to the periodic concave/convex structure, and in the periodic concave/convex structure, a Schottky junction portion that has a Schottky junction with the metal film is provided on a base end side of the convex portion, and a non-Schottky junction portion that does not have a Schottky junction with the metal film is provided on a distal end side of the convex portion.
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