公开(公告)号：US20190074396A1

公开(公告)日：2019-03-07

申请号：US16114360

申请日：2018-08-28

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Wei DONG ,  Hiroyasu FUJIWARA ,  Kazutoshi NAKAJIMA

IPC: H01L31/108 ,  H01L31/0232 ,  G02B6/122 ,  H01L31/0224

Abstract: A photodetection element includes a semiconductor layer having, on one surface side, a periodic concave/convex structure that includes periodic convex portions and concave portions and converts light into surface plasmon, and a metal film provided on the one surface side of the semiconductor layer in correspondence to the periodic concave/convex structure, and in the periodic concave/convex structure, a Schottky junction portion that has a Schottky junction with the metal film is provided on a base end side of the convex portion, and a non-Schottky junction portion that does not have a Schottky junction with the metal film is provided on a distal end side of the convex portion.

公开(公告)号：US20190058073A1

公开(公告)日：2019-02-21

申请号：US16100457

申请日：2018-08-10

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Hiroyasu FUJIWARA ,  Wei DONG ,  Kazutoshi NAKAJIMA ,  Shohei HAYASHI

IPC: H01L31/108 ,  H01L31/07 ,  H01L31/0352 ,  H01L31/0232 ,  H01L31/101

Abstract: A photodetection element is a photodetection element having an incidence surface for light on a back surface of a semiconductor layer, and includes a periodic nano-concave/convex structure provided on a front surface of the semiconductor layer and having convex portions and concave portions constituting a longitudinal resonator and a transverse resonator for the light incident from the incidence surface, the periodic nano-concave/convex structure converting the light into surface plasmons, and a metal film provided to cover the periodic nano-concave/convex structure, a height and an arrangement pitch of the convex portions in the periodic nano-concave/convex structure are set such that a resonance wavelength of the longitudinal resonator and a resonance wavelength of the transverse resonator match, and a thickness of the metal film is equal to or greater than 20 nm.

公开(公告)号：US20240194816A1

公开(公告)日：2024-06-13

申请号：US18529176

申请日：2023-12-05

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Kazutoshi NAKAJIMA ,  Wei DONG ,  Hiroyasu FUJIWARA

IPC: H01L31/108 ,  H01L31/18

CPC classification number: H01L31/1085 ,  H01L31/1804

Abstract: A method of manufacturing an optical detection element includes: a first process of forming an amorphous semiconductor layer on a support; a second process of forming a first metal layer on the semiconductor layer; a third process of carrying out a heat treatment so that the semiconductor layer is polycrystallized and the semiconductor layer and the first metal layer are interchanged with each other, thereby forming the first metal layer on the support and forming a polycrystalline photoelectric conversion layer on the first metal layer; and a fourth process of forming a second metal layer on the photoelectric conversion layer. In the fourth process, the second metal layer is formed so that a width of the second metal layer becomes a width with which surface plasmon resonance occurs due to incidence of light in a predetermined wavelength region.

公开(公告)号：US20240105870A1

公开(公告)日：2024-03-28

申请号：US18371606

申请日：2023-09-22

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Kazutoshi NAKAJIMA ,  Hiroyasu FUJIWARA ,  Wei DONG

IPC: H01L31/0368 ,  H01L31/0224 ,  H01L31/109 ,  H01L31/18

CPC classification number: H01L31/03682 ,  H01L31/022416 ,  H01L31/109 ,  H01L31/1812

Abstract: A photodetection element includes an N-type silicon layer formed in a single crystal state, a P-type germanium-containing layer formed in a polycrystal state and forming a hetero PN junction between the germanium-containing layer and the silicon layer, a first electrode electrically connected to the silicon layer, and a second electrode electrically connected to the germanium-containing layer.

公开(公告)号：US20140319637A1

公开(公告)日：2014-10-30

申请号：US14259509

申请日：2014-04-23

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Kazutoshi NAKAJIMA ,  Minoru NIIGAKI ,  Toru HIROHATA ,  Hiroyuki YAMASHITA ,  Wataru AKAHORI

IPC: H01L31/0232

CPC classification number: H01L31/0232 ,  H01L31/02327 ,  H01L31/035209 ,  H01L31/035218 ,  H01L31/035236 ,  H01L31/09

Abstract: A photodetector 1A comprises an optical element 10A for generating an electric field component in a predetermined direction when light is incident thereon along the predetermined direction, the optical element 10A having a structure including first regions and second regions periodically arranged with respect to the first regions along a plane perpendicular to the predetermined direction; and a semiconductor layer 40, arranged on the other side opposite from one side in the predetermined direction with respect to the optical element 10A, having a semiconductor multilayer body 42 for generating a current according to the electric field component; each end part on the other side of the second regions being located closer to the other side than is each end part on the other side of the first regions; each first region being made of a dielectric body having a refractive index greater than that of each second region.

Abstract translation: 光电检测器1A包括光学元件10A，用于沿着预定方向入射到其上时沿预定方向产生预定方向的电场分量，光学元件10A具有包括第一区域和第二区域的结构，该第一区域和第二区域相对于第一区域周期性地布置 垂直于预定方向的平面; 以及半导体层40，其配置在相对于光学元件10A的与预定方向相对的另一侧上，具有用于根据电场分量产生电流的半导体多层体42; 第二区域的另一侧的每个端部位于比第一区域的另一侧的每个端部更靠近另一侧的位置; 每个第一区域由折射率大于每个第二区域的折射率的电介质体制成。

公开(公告)号：US20130320470A1

公开(公告)日：2013-12-05

申请号：US13899940

申请日：2013-05-22

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Kazutoshi NAKAJIMA ,  Toru HIROHATA ,  Minoru NIIGAKI ,  Wataru AKAHORI ,  Kazuue FUJITA

IPC: H01L31/0352

CPC classification number: H01L31/0352 ,  B82Y20/00 ,  H01L27/1446 ,  H01L27/14649 ,  H01L31/035236 ,  H01L31/09

Abstract: A photodetector 1A comprises a multilayer structure 3 having a first layer 4 constituted by first metal or first semiconductor, a semiconductor structure layer 5 mounted on the first layer 4 and adapted to excite an electron by plasmon resonance, and a second layer 6 mounted on the semiconductor structure layer 5 and constituted by second metal or second semiconductor.

Abstract translation: 光电检测器1A包括具有由第一金属或第一半导体构成的第一层4的多层结构3，安装在第一层4上并适于通过等离子体共振激发电子的半导体结构层5和安装在第一层上的第二层6 半导体结构层5，由第二金属或第二半导体构成。

公开(公告)号：US20130307108A1

公开(公告)日：2013-11-21

申请号：US13888656

申请日：2013-05-07

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Kazutoshi NAKAJIMA ,  Toru HIROHATA ,  Wataru AKAHORI ,  Kazunori TANAKA ,  Kazuue FUJITA

IPC: H01L31/0232

CPC classification number: H01L31/02327 ,  G02B1/005

Abstract: An optical element 10 for transmitting light therethrough along a predetermined direction and modulating the light comprises a structure 11 having a first region R1 and a second region R2 periodically arranged with respect to the first region R1 along a plane perpendicular to the predetermined direction, the first and second regions R1, R2 having respective refractive indexes different from each other, and properties of transmitting the light therethrough.

Abstract translation: 用于沿着预定方向透射光并调制光的光学元件10包括具有第一区域R1和第二区域R2的结构11，第一区域R1和第二区域R2沿着垂直于预定方向的平面相对于第一区域R1周期性地布置， 和具有各自折射率彼此不同的第二区域R1，R2以及透射光的性质。