Method for inspecting semiconductor and semiconductor inspecting device

    公开(公告)号:US12211199B2

    公开(公告)日:2025-01-28

    申请号:US17608857

    申请日:2020-04-16

    Abstract: A semiconductor inspection method by an observation system includes a step of acquiring a first pattern image showing a pattern of a semiconductor device, a step of acquiring a second pattern image showing a pattern of the semiconductor device and having a different resolution from a resolution of the first pattern image, a step of learning a reconstruction process of the second pattern image using the first pattern image as training data by machine learning, and reconstructing the second pattern image into a reconstructed image having a different resolution from a resolution of the second pattern image by the reconstruction process based on a result of the learning, and a step of performing alignment based on a region calculated to have a high degree of certainty by the reconstruction process in the reconstructed image and the first pattern image.

    Image processing device, imaging device, microscope device, image processing method, and image processing program

    公开(公告)号:US10055638B2

    公开(公告)日:2018-08-21

    申请号:US13726916

    申请日:2012-12-26

    CPC classification number: G06K9/00147

    Abstract: The image processing device 10 includes a template preparation unit 15 for preparing, from a template included in pixels of M rows and M columns (M is an integer not less than 3) corresponding to a molecular model, a partial template corresponding to a shape for which a shape of the molecular model is divided, an evaluation value calculation unit 17 for evaluating, in the optical image, by use of the partial template, matching between the optical image and the partial template to calculate an evaluation value for every plurality of the attention pixels, and a molecular location identification unit 18 for identifying the molecular location in the optical image based on the evaluation value.

    Semiconductor device examination method and semiconductor device examination device

    公开(公告)号:US12044729B2

    公开(公告)日:2024-07-23

    申请号:US17606829

    申请日:2020-04-09

    CPC classification number: G01R31/303

    Abstract: A semiconductor device examination method includes a step of acquiring a first interference waveform based on signals from a plurality of drive elements according to light from a first light beam spot including the plurality of drive elements in a semiconductor device, a step of acquiring a second interference waveform based on signals from the plurality of drive elements according to light from a second light beam spot having a region configured to partially overlap the first spot and including the plurality of drive elements, and a step of separating a waveform signal for each of the drive elements in the first and second spots based on the first and second interference waveforms.

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