公开(公告)号：US20190265297A1

公开(公告)日：2019-08-29

申请号：US16343809

申请日：2017-08-01

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Yoshitaka IWAKI

IPC: G01R31/317 ,  G01R31/265

Abstract: An inspection method for inspecting a semiconductor device which is an object to be inspected includes a step of inputting an input signal to the semiconductor device, a step of irradiating the semiconductor device with light, a step of outputting a result signal indicating a change in a state of the semiconductor device based on an output signal which is output from the semiconductor device to which the input signal is input while the semiconductor device is irradiated with the light, and a step of deriving time information relating to a time from the input of the input signal to the semiconductor device to the output of the result signal.

公开(公告)号：US20220207710A1

公开(公告)日：2022-06-30

申请号：US17607155

申请日：2020-05-19

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Hirotoshi TERADA ,  Yoshitaka IWAKI

IPC: G06T7/00 ,  G06T7/70 ,  G06T11/00

Abstract: A semiconductor apparatus examination method includes a step of detecting light from a plurality of positions in a semiconductor apparatus (D) and acquiring a waveform corresponding to each of the plurality of positions, a step of extracting a waveform corresponding to a specific timing from the waveform corresponding to each of the plurality of positions and generating an image corresponding to the specific timing based on the extracted waveform, and a step of extracting a feature point based on a brightness distribution correlation value in the image corresponding to the specific timing and identifying a position of a drive element in the semiconductor apparatus based on the feature point.

公开(公告)号：US20210325435A1

公开(公告)日：2021-10-21

申请号：US17271042

申请日：2019-06-05

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Yoshitaka IWAKI ,  Yuji NAKAJIMA ,  Toshiki YAMADA

IPC: G01R19/00 ,  G01R31/265 ,  G01R31/311 ,  G01R31/26

Abstract: An inspection device includes a reference signal output section, a noise removal section, and an electrical characteristic measurement section. The reference signal output section is connected to an external power supply device in electrical parallel with a semiconductor sample, and outputs a reference signal according to the output of the external power supply device. The noise removal section outputs a noise removal signal obtained by removing a noise component of the output of the external power supply device from the current signal output from the semiconductor sample based on the reference signal. The electrical characteristic measurement section measures the electrical characteristic of the semiconductor sample based on the noise removal signal. The inspection device measures the electrical characteristic of the semiconductor sample to which a voltage is being applied by the external power supply device and which is being irradiated and scanned with light. The inspection device outputs a defective portion of the semiconductor sample based on the electrical characteristic.