公开(公告)号：US10147824B2

公开(公告)日：2018-12-04

申请号：US15124075

申请日：2015-01-26

Applicant: HELMHOLTZ-ZENTRUM DRESDEN-ROSSENDORF E.V.

Inventor： Heidemarie Schmidt ,  Ilona Skorupa ,  Slawomir Prucnal ,  Danilo Buerger ,  Agnieszka Bogusz ,  Laveen Selvaraj

IPC: H01L29/93 ,  H01L27/10 ,  H01L29/861 ,  H01L49/02 ,  H01G7/02 ,  H01L27/11507 ,  H01L31/09 ,  H01L31/10 ,  H01L27/102

Abstract: A capacitance diode or variable capacitance diode includes first and second electrodes and a layer configuration disposed in contact-making fashion between the two electrodes. The layer configuration has, one after the other in a direction from the first electrode towards the second electrode, a layer formed of a ferroelectric material and an electrically insulating layer formed of a dielectric material having electrically charged defects. A method for producing a capacitance diode or a variable capacitance diode, a storage device and a detector including a capacitance diode or a variable capacitance diode are also provided.