公开(公告)号：US10147824B2

公开(公告)日：2018-12-04

申请号：US15124075

申请日：2015-01-26

Applicant: HELMHOLTZ-ZENTRUM DRESDEN-ROSSENDORF E.V.

Inventor： Heidemarie Schmidt ,  Ilona Skorupa ,  Slawomir Prucnal ,  Danilo Buerger ,  Agnieszka Bogusz ,  Laveen Selvaraj

IPC: H01L29/93 ,  H01L27/10 ,  H01L29/861 ,  H01L49/02 ,  H01G7/02 ,  H01L27/11507 ,  H01L31/09 ,  H01L31/10 ,  H01L27/102

Abstract: A capacitance diode or variable capacitance diode includes first and second electrodes and a layer configuration disposed in contact-making fashion between the two electrodes. The layer configuration has, one after the other in a direction from the first electrode towards the second electrode, a layer formed of a ferroelectric material and an electrically insulating layer formed of a dielectric material having electrically charged defects. A method for producing a capacitance diode or a variable capacitance diode, a storage device and a detector including a capacitance diode or a variable capacitance diode are also provided.

公开(公告)号：US11355749B2

公开(公告)日：2022-06-07

申请号：US16077963

申请日：2017-02-10

Applicant: ROVAK GmbH ,  Technische Universitaet Bergakademie Freiberg ,  Helmholtz-Zentrum Dresden-Rossendorf e.V.

Inventor： Charaf Cherkouk ,  Dirk C. Meyer ,  Tilmann Leisegang ,  Teresa Orellana Perez ,  Slawomir Prucnal ,  Wolfgang Skorupa

IPC: H01M4/38 ,  H01M4/04 ,  H01M4/134

Abstract: A method for producing silicon-based anodes for secondary batteries carries out the following steps for producing an anode: —depositing a silicon layer on a metal substrate having grain boundaries, wherein the silicon layer has a first boundary surface directed towards the metal substrate, —heating the metal substrate using a heating unit to a temperature between 200° C. and 1000° C., —conditioning the region of the second boundary surface of the silicon layer that is facing away from the metal substrate using an energy-intensive irradiation during the heating, —generating polyphases in the region of the silicon layer and the metal substrate, made up of amorphous silicon and/or crystalline silicon of the silicon of the silicon layer and of crystalline metal of the metal substrate and of silicide and—generating crystalline metal of the metal substrate.