公开(公告)号：US07704897B2

公开(公告)日：2010-04-27

申请号：US12035603

申请日：2008-02-22

申请人： Hemant P. Mungekar ,  Young S. Lee ,  Agnieszka Jakubowicz ,  Zhong Qiang Hua ,  Rionard Purnawan ,  Sanjay Kamath ,  Walter Zygmunt

发明人： Hemant P. Mungekar ,  Young S. Lee ,  Agnieszka Jakubowicz ,  Zhong Qiang Hua ,  Rionard Purnawan ,  Sanjay Kamath ,  Walter Zygmunt

IPC分类号： H01L21/316

CPC分类号： C23C16/045 ,  C23C16/308 ,  C23C16/507 ,  H01L21/3145 ,  H01L27/14627 ,  H01L27/14629 ,  Y10T29/41

摘要： The present invention pertains to methods of depositing low stress/high index multi-layer films on a substrate using an HDP-CVD process. The multi-layer films include two lining layers and a bulk gap-fill layer and the HDP-CVD process employs a reduced substrate bias power during deposition of at least the second lining layer. Deposition of the three layers occurs at reduced deposition temperatures which further reduces the stress of the multi-layer film. The lower stress results in less defectivity which improves the films ability to maintain optical confinement of radiation.

摘要翻译： 本发明涉及使用HDP-CVD工艺在衬底上沉积低应力/高折射率多层膜的方法。 多层膜包括两个衬里层和大块间隙填充层，并且HDP-CVD工艺在沉积至少第二衬里层期间采用降低的衬底偏置功率。 在降低的沉积温度下发生三层沉积，这进一步降低了多层膜的应力。 较低的应力导致较少的缺陷率，这提高了膜保持辐射的光学限制的能力。

公开(公告)号：US20090215281A1

公开(公告)日：2009-08-27

申请号：US12035603

申请日：2008-02-22

申请人： HEMANT P. MUNGEKAR ,  Young S. Lee ,  Agnieszka Jakubowicz ,  Zhong Qiang Hua ,  Rionard Purnawan ,  Sanjay Kamath ,  Walter Zygmunt

发明人： HEMANT P. MUNGEKAR ,  Young S. Lee ,  Agnieszka Jakubowicz ,  Zhong Qiang Hua ,  Rionard Purnawan ,  Sanjay Kamath ,  Walter Zygmunt

IPC分类号： H01L21/469 ,  H01L21/00 ,  H05H1/24

CPC分类号： C23C16/045 ,  C23C16/308 ,  C23C16/507 ,  H01L21/3145 ,  H01L27/14627 ,  H01L27/14629 ,  Y10T29/41

摘要： The present invention pertains to methods of depositing low stress/high index multi-layer films on a substrate using an HDP-CVD process. The multi-layer films include two lining layers and a bulk gap-fill layer and the HDP-CVD process employs a reduced substrate bias power during deposition of at least the second lining layer. Deposition of the three layers occurs at reduced deposition temperatures which further reduces the stress of the multi-layer film. The lower stress results in less defectivity which improves the films ability to maintain optical confinement of radiation.

摘要翻译： 本发明涉及使用HDP-CVD工艺在衬底上沉积低应力/高折射率多层膜的方法。 多层膜包括两个衬里层和大块间隙填充层，并且HDP-CVD工艺在沉积至少第二衬里层期间采用降低的衬底偏置功率。 在降低的沉积温度下发生三层沉积，这进一步降低了多层膜的应力。 较低的应力导致较少的缺陷率，这提高了膜保持辐射的光学限制的能力。