公开(公告)号：US07704897B2

公开(公告)日：2010-04-27

申请号：US12035603

申请日：2008-02-22

申请人： Hemant P. Mungekar ,  Young S. Lee ,  Agnieszka Jakubowicz ,  Zhong Qiang Hua ,  Rionard Purnawan ,  Sanjay Kamath ,  Walter Zygmunt

发明人： Hemant P. Mungekar ,  Young S. Lee ,  Agnieszka Jakubowicz ,  Zhong Qiang Hua ,  Rionard Purnawan ,  Sanjay Kamath ,  Walter Zygmunt

IPC分类号： H01L21/316

CPC分类号： C23C16/045 ,  C23C16/308 ,  C23C16/507 ,  H01L21/3145 ,  H01L27/14627 ,  H01L27/14629 ,  Y10T29/41

摘要： The present invention pertains to methods of depositing low stress/high index multi-layer films on a substrate using an HDP-CVD process. The multi-layer films include two lining layers and a bulk gap-fill layer and the HDP-CVD process employs a reduced substrate bias power during deposition of at least the second lining layer. Deposition of the three layers occurs at reduced deposition temperatures which further reduces the stress of the multi-layer film. The lower stress results in less defectivity which improves the films ability to maintain optical confinement of radiation.

摘要翻译： 本发明涉及使用HDP-CVD工艺在衬底上沉积低应力/高折射率多层膜的方法。 多层膜包括两个衬里层和大块间隙填充层，并且HDP-CVD工艺在沉积至少第二衬里层期间采用降低的衬底偏置功率。 在降低的沉积温度下发生三层沉积，这进一步降低了多层膜的应力。 较低的应力导致较少的缺陷率，这提高了膜保持辐射的光学限制的能力。

公开(公告)号：US20090215281A1

公开(公告)日：2009-08-27

申请号：US12035603

申请日：2008-02-22

申请人： HEMANT P. MUNGEKAR ,  Young S. Lee ,  Agnieszka Jakubowicz ,  Zhong Qiang Hua ,  Rionard Purnawan ,  Sanjay Kamath ,  Walter Zygmunt

发明人： HEMANT P. MUNGEKAR ,  Young S. Lee ,  Agnieszka Jakubowicz ,  Zhong Qiang Hua ,  Rionard Purnawan ,  Sanjay Kamath ,  Walter Zygmunt

IPC分类号： H01L21/469 ,  H01L21/00 ,  H05H1/24

CPC分类号： C23C16/045 ,  C23C16/308 ,  C23C16/507 ,  H01L21/3145 ,  H01L27/14627 ,  H01L27/14629 ,  Y10T29/41

摘要： The present invention pertains to methods of depositing low stress/high index multi-layer films on a substrate using an HDP-CVD process. The multi-layer films include two lining layers and a bulk gap-fill layer and the HDP-CVD process employs a reduced substrate bias power during deposition of at least the second lining layer. Deposition of the three layers occurs at reduced deposition temperatures which further reduces the stress of the multi-layer film. The lower stress results in less defectivity which improves the films ability to maintain optical confinement of radiation.

摘要翻译： 本发明涉及使用HDP-CVD工艺在衬底上沉积低应力/高折射率多层膜的方法。 多层膜包括两个衬里层和大块间隙填充层，并且HDP-CVD工艺在沉积至少第二衬里层期间采用降低的衬底偏置功率。 在降低的沉积温度下发生三层沉积，这进一步降低了多层膜的应力。 较低的应力导致较少的缺陷率，这提高了膜保持辐射的光学限制的能力。

公开(公告)号：US20050181632A1

公开(公告)日：2005-08-18

申请号：US11095704

申请日：2005-03-30

申请人： Zhengquan Tan ,  Dongqing Li ,  Walter Zygmunt

发明人： Zhengquan Tan ,  Dongqing Li ,  Walter Zygmunt

IPC分类号： C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  C23C16/507 ,  H01L21/314 ,  H01L21/316 ,  H01L21/762 ,  H01L21/76 ,  H01L21/31 ,  H01L21/469

CPC分类号： C23C16/4558 ,  C23C16/401 ,  C23C16/507 ,  H01L21/02131 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31608 ,  H01L21/31612 ,  H01L21/31629 ,  H01L21/76229

摘要： A method for forming a silicon oxide layer over a substrate disposed in a high density plasma substrate processing chamber. The method includes flowing a process gas that includes a silicon-containing source, an oxygen-containing source and a fluorine-containing source into the substrate processing chamber and forming a plasma from said process gas. The substrate is heated to a temperature above 450° C. during deposition of said silicon oxide layer and the deposited layer has a fluorine content of less than 1.0 atomic percent.

公开(公告)号：US06929700B2

公开(公告)日：2005-08-16

申请号：US10397678

申请日：2003-03-25

申请人： Zhengquan Tan ,  Dongqing Li ,  Walter Zygmunt ,  Tetsuya Ishikawa

发明人： Zhengquan Tan ,  Dongqing Li ,  Walter Zygmunt ,  Tetsuya Ishikawa

IPC分类号： C23C16/40 ,  H01L21/316 ,  H01L21/762 ,  H01L21/768 ,  C23C16/00

CPC分类号： H01L21/02164 ,  C23C16/401 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/76229 ,  H01L21/76837

摘要： A substrate processing apparatus comprising a substrate processing chamber, a gas distribution system operatively coupled to the chamber, a high density plasma power source, a controller operatively coupled to the gas distribution system and the high density plasma power source and a memory coupled to the controller. The memory includes computer instructions embodied in a computer-readable format. The computer instructions comprise (i) instructions that control the gas distribution system to flow a process gas comprising a silane gas, an oxygen-containing source, an inert gas and a hydrogen-containing source that is either molecular hydrogen or a hydride gas that does not include silicon, boron or phosphorus and (ii) instructions that control the high density plasma source to form a plasma having an ion density of at least 1×1011 ions/cm3 from the process gas to deposit the silicon oxide layer over the substrate.

摘要翻译： 一种衬底处理设备，包括衬底处理室，可操作地耦合到腔室的气体分配系统，高密度等离子体电源，可操作地耦合到气体分配系统和高密度等离子体电源的控制器以及耦合到控制器的存储器 。 存储器包括以计算机可读格式体现的计算机指令。 计算机指令包括（i）控制气体分配系统以使包含硅烷气体，含氧源，惰性气体和含氢源（其为分子氢或氢化物气体）的工艺气体流动的指令 不包括硅，硼或磷和（ii）控制高密度等离子体源以形成离子密度为至少1×10 11个/ cm 3的等离子体的说明书 从工艺气体将氧化硅层沉积在衬底上。

公开(公告)号：US06914016B2

公开(公告)日：2005-07-05

申请号：US10763018

申请日：2004-01-21

申请人： Zhengquan Tan ,  Dongqing Li ,  Walter Zygmunt

发明人： Zhengquan Tan ,  Dongqing Li ,  Walter Zygmunt

IPC分类号： C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  C23C16/507 ,  H01L21/314 ,  H01L21/316 ,  H01L21/762 ,  H01L21/31 ,  H01L21/469

CPC分类号： C23C16/4558 ,  C23C16/401 ,  C23C16/507 ,  H01L21/02131 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31608 ,  H01L21/31612 ,  H01L21/31629 ,  H01L21/76229

摘要： A method for forming a silicon oxide layer over a substrate disposed in a high density plasma substrate processing chamber. The method includes flowing a process gas that includes a silicon-containing source, an oxygen-containing source and a fluorine-containing source into the substrate processing chamber and forming a plasma from said process gas. The substrate is heated to a temperature above 450° C. during deposition of said silicon oxide layer and the deposited layer has a fluorine content of less than 1.0 atomic percent.

摘要翻译： 一种在设置在高密度等离子体基板处理室中的基板上形成氧化硅层的方法。 该方法包括将包含含硅源，含氧源和含氟源的处理气体流入基板处理室并从所述处理气体形成等离子体。 在沉积所述氧化硅层期间将衬底加热到​​高于450℃的温度，并且沉积层的氟含量小于1.0原子％。

公开(公告)号：US06596653B2

公开(公告)日：2003-07-22

申请号：US09854406

申请日：2001-05-11

申请人： Zhengquan Tan ,  Dongqing Li ,  Walter Zygmunt ,  Tetsuya Ishikawa

发明人： Zhengquan Tan ,  Dongqing Li ,  Walter Zygmunt ,  Tetsuya Ishikawa

IPC分类号： H01L21469

CPC分类号： H01L21/02164 ,  C23C16/401 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/76229 ,  H01L21/76837

摘要： A method of forming a silicon oxide layer over a substrate disposed in a high density plasma substrate processing chamber. The silicon oxide layer is formed by flowing a process gas including a silicon-containing source, an oxygen-containing source, an inert gas and a hydrogen-containing source into the substrate processing chamber and forming a high density plasma (i.e., a plasma having an ion density of at least 1×1011 ions/cm3) from the process gas to deposit said silicon oxide layer over said substrate. In one embodiment, the hydrogen-containing source in the process gas is selected from the group of H2, H2O, NH3, CH4 and C2H6.

公开(公告)号：US06200911B1

公开(公告)日：2001-03-13

申请号：US09264990

申请日：1998-04-21

申请人： Pravin Narwankar ,  Sameer Desai ,  Walter Zygmunt ,  Turgut Sahin ,  Laxman Murugesh

发明人： Pravin Narwankar ,  Sameer Desai ,  Walter Zygmunt ,  Turgut Sahin ,  Laxman Murugesh

IPC分类号： H01L2131

CPC分类号： C23C16/4411 ,  C23C16/045 ,  C23C16/4405 ,  C23C16/4412 ,  C23C16/46 ,  C23C16/507 ,  C23C16/52 ,  H01J37/321 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31608 ,  H01L21/31612 ,  H01L21/76224

摘要： A method and apparatus for modifying the profile of narrow, high-aspect-ratio gaps on a semiconductor substrate are used to fill the gaps in a void-free manner. Differential heating characteristics of a substrate in a high-density plasma chemical vapor deposition (HDP-CVD) system helps to prevent the gaps from being pinched off before they are filled. The power distribution between coils forming the plasma varies the angular dependence of the sputter etch component of the plasma, and thus may be used to modify the gap profile, independently or in conjunction with differential heating. A heat source may be applied to the backside of a substrate during the concurrent deposition/etch process to further enhance the profile modification characteristics of differential heating.

公开(公告)号：US06579811B2

公开(公告)日：2003-06-17

申请号：US09745918

申请日：2000-12-20

申请人： Pravin Narwankar ,  Sameer Desai ,  Walter Zygmunt ,  Turgut Sahin ,  Laxman Murugesh

发明人： Pravin Narwankar ,  Sameer Desai ,  Walter Zygmunt ,  Turgut Sahin ,  Laxman Murugesh

IPC分类号： H01L2131

CPC分类号： C23C16/4411 ,  C23C16/045 ,  C23C16/4405 ,  C23C16/4412 ,  C23C16/46 ,  C23C16/507 ,  C23C16/52 ,  H01J37/321 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31608 ,  H01L21/31612 ,  H01L21/76224

摘要： A method and apparatus for modifying the profile of narrow, high-aspect-ratio gaps on a semiconductor substrate are used to fill the gaps in a void-free manner. Differential heating characteristics of a substrate in a high-density plasma chemical vapor deposition (HDP-CVD) system helps to prevent the gaps from being pinched off before they are filled. The power distribution between coils forming the plasma varies the angular dependence of the sputter etch component of the plasma, and thus may be used to modify the gap profile, independently or in conjunction with differential heating. A heat source may be applied to the backside of a substrate during the concurrent deposition/etch process to further enhance the profile modification characteristics of differential heating.

摘要翻译： 用于改变半导体衬底上窄，高纵横比间隙的轮廓的方法和装置用于以无空隙的方式填充间隙。 高密度等离子体化学气相沉积（HDP-CVD）系统中的衬底的差分加热特性有助于防止间隙在填充之前被夹住。 形成等离子体的线圈之间的功率分布改变了等离子体的溅射蚀刻部件的角度依赖性，并且因此可以独立地或与差分加热一起用于修改间隙分布。 在同时的沉积/蚀刻过程期间，可以将热源施加到衬底的背面，以进一步增强差分加热的轮廓修改特性。

公开(公告)号：US07196021B2

公开(公告)日：2007-03-27

申请号：US11095704

申请日：2005-03-30

申请人： Zhengquan Tan ,  Dongqing Li ,  Walter Zygmunt

发明人： Zhengquan Tan ,  Dongqing Li ,  Walter Zygmunt

IPC分类号： H01L21/31

CPC分类号： C23C16/4558 ,  C23C16/401 ,  C23C16/507 ,  H01L21/02131 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31608 ,  H01L21/31612 ,  H01L21/31629 ,  H01L21/76229

摘要： A method for forming a silicon oxide layer over a substrate disposed in a high density plasma substrate processing chamber. The method includes flowing a process gas that includes a silicon-containing source, an oxygen-containing source and a fluorine-containing source into the substrate processing chamber and forming a plasma from said process gas. The substrate is heated to a temperature above 450° C. during deposition of said silicon oxide layer and the deposited layer has a fluorine content of less than 1.0 atomic percent.

摘要翻译： 一种在设置在高密度等离子体基板处理室中的基板上形成氧化硅层的方法。 该方法包括将包含含硅源，含氧源和含氟源的处理气体流入基板处理室并从所述处理气体形成等离子体。 在沉积所述氧化硅层期间将衬底加热到​​高于450℃的温度，并且沉积层的氟含量小于1.0原子％。

公开(公告)号：US06740601B2

公开(公告)日：2004-05-25

申请号：US09854083

申请日：2001-05-11

申请人： Zhengquan Tan ,  Dongqing Li ,  Walter Zygmunt

发明人： Zhengquan Tan ,  Dongqing Li ,  Walter Zygmunt

IPC分类号： H01L2131

CPC分类号： C23C16/4558 ,  C23C16/401 ,  C23C16/507 ,  H01L21/02131 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31608 ,  H01L21/31612 ,  H01L21/31629 ,  H01L21/76229

摘要： A method for forming a silicon oxide layer over a substrate disposed in a high density plasma substrate processing chamber. The method includes flowing a process gas that includes a silicon-containing source, an oxygen-containing source and a fluorine-containing source into the substrate processing chamber and forming a plasma from said process gas. The substrate is heated to a temperature above 450° C. during deposition of said silicon oxide layer and the deposited layer has a fluorine content of less than 1.0 atomic percent.