公开(公告)号：US20090215281A1

公开(公告)日：2009-08-27

申请号：US12035603

申请日：2008-02-22

申请人： HEMANT P. MUNGEKAR ,  Young S. Lee ,  Agnieszka Jakubowicz ,  Zhong Qiang Hua ,  Rionard Purnawan ,  Sanjay Kamath ,  Walter Zygmunt

发明人： HEMANT P. MUNGEKAR ,  Young S. Lee ,  Agnieszka Jakubowicz ,  Zhong Qiang Hua ,  Rionard Purnawan ,  Sanjay Kamath ,  Walter Zygmunt

IPC分类号： H01L21/469 ,  H01L21/00 ,  H05H1/24

CPC分类号： C23C16/045 ,  C23C16/308 ,  C23C16/507 ,  H01L21/3145 ,  H01L27/14627 ,  H01L27/14629 ,  Y10T29/41

摘要： The present invention pertains to methods of depositing low stress/high index multi-layer films on a substrate using an HDP-CVD process. The multi-layer films include two lining layers and a bulk gap-fill layer and the HDP-CVD process employs a reduced substrate bias power during deposition of at least the second lining layer. Deposition of the three layers occurs at reduced deposition temperatures which further reduces the stress of the multi-layer film. The lower stress results in less defectivity which improves the films ability to maintain optical confinement of radiation.

摘要翻译： 本发明涉及使用HDP-CVD工艺在衬底上沉积低应力/高折射率多层膜的方法。 多层膜包括两个衬里层和大块间隙填充层，并且HDP-CVD工艺在沉积至少第二衬里层期间采用降低的衬底偏置功率。 在降低的沉积温度下发生三层沉积，这进一步降低了多层膜的应力。 较低的应力导致较少的缺陷率，这提高了膜保持辐射的光学限制的能力。

公开(公告)号：US20130059092A1

公开(公告)日：2013-03-07

申请号：US13605449

申请日：2012-09-06

申请人： HEMANT P. MUNGEKAR ,  Alexander S. Polyak ,  Michael S. Cox

发明人： HEMANT P. MUNGEKAR ,  Alexander S. Polyak ,  Michael S. Cox

IPC分类号： C23C16/513 ,  H05H1/24

CPC分类号： H01J37/3244 ,  C23C16/45504 ,  C23C16/45557 ,  C23C16/45563 ,  C23C16/4584 ,  C23C16/50 ,  C23C16/52 ,  C23C16/54 ,  H01J37/32779

摘要： A method and apparatus for processing a substrate is described. One embodiment of the invention provides an apparatus for forming thin films. The apparatus comprises a chamber defining an internal volume, a plasma source disposed within the internal volume, and at least one gas injection source disposed adjacent the plasma source within the internal volume, wherein the at least one gas injection source comprises a first channel and a second channel for delivering gases to the internal volume, the first channel delivering a gas at a first pressure or a first density and the second channel delivering a gas at a second pressure or a second density, the first pressure or the first density being different than the second pressure or the second density.

摘要翻译： 描述了用于处理衬底的方法和设备。 本发明的一个实施例提供了一种用于形成薄膜的装置。 该装置包括限定内部体积的室，设置在内部体积内的等离子体源以及在内部体积内与等离子体源相邻设置的至少一个气体注入源，其中至少一个气体注入源包括第一通道和 用于将气体输送到内部容积的第二通道，所述第一通道以第一压力或第一密度输送气体，所述第二通道输送处于第二压力或第二密度的气体，所述第一压力或所述第一密度不同于 第二压力或第二密度。