公开(公告)号：US09613875B2

公开(公告)日：2017-04-04

申请号：US15194107

申请日：2016-06-27

申请人： HERMES-EPITEK CORP.

发明人： Takashi Kobayashi ,  Po-Jung Lin ,  Che-Lin Chen ,  Bu-Chin Chung

IPC分类号： H01L21/00 ,  H01L21/67 ,  H01L21/02 ,  H01L21/66 ,  C23C16/22

CPC分类号： H01L22/26 ,  C23C16/22 ,  C30B25/16 ,  C30B29/406 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/67288 ,  H01L22/12

摘要： A system for manufacturing semiconductor epitaxy structure includes a deposition apparatus, a curvature monitor system and a control unit. The deposition apparatus is configured for sequentially depositing a buffer layer, a first epitaxy layer, an insertion layer, a second epitaxy layer on a substrate. The curvature monitor system is configured for monitoring a curvature value of the semiconductor epitaxy structure. The control unit is configured for controlling the deposition apparatus to stop depositing the buffer layer, the first epitaxy layer, the insertion layer and the second epitaxy layer according to the curvature value of the semiconductor epitaxy structure measured by the curvature monitor system. The above-mentioned system for manufacturing semiconductor epitaxy structure is able to effectively control the strain of the semiconductor epitaxy structure during growth. A method for manufacturing semiconductor epitaxy structure is also disclosed.

公开(公告)号：US09406536B1

公开(公告)日：2016-08-02

申请号：US14754207

申请日：2015-06-29

申请人： HERMES-EPITEK CORP.

发明人： Takashi Kobayashi ,  Po-Jung Lin ,  Che-Lin Chen ,  Bu-Chin Chung

IPC分类号： H01L21/00 ,  H01L21/67 ,  H01L21/02 ,  H01L21/66

CPC分类号： H01L22/26 ,  C23C16/22 ,  C30B25/16 ,  C30B29/406 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/67288 ,  H01L22/12

摘要： A system for manufacturing semiconductor epitaxy structure includes a deposition apparatus, a curvature monitor system and a control unit. The deposition apparatus is configured for sequentially depositing a buffer layer, a first epitaxy layer, an insertion layer, a second epitaxy layer on a substrate. The curvature monitor system is configured for monitoring a curvature value of the semiconductor epitaxy structure. The control unit is configured for controlling the deposition apparatus to stop depositing the buffer layer, the first epitaxy layer, the insertion layer and the second epitaxy layer according to the curvature value of the semiconductor epitaxy structure measured by the curvature monitor system. The above-mentioned system for manufacturing semiconductor epitaxy structure is able to effectively control the strain of the semiconductor epitaxy structure during growth. A method for manufacturing semiconductor epitaxy structure is also disclosed.

摘要翻译： 用于制造半导体外延结构的系统包括沉积设备，曲率监测系统和控制单元。 沉积装置被配置为在衬底上依次沉积缓冲层，第一外延层，插入层，第二外延层。 曲率监视器系统被配置用于监测半导体外延结构的曲率值。 控制单元被配置为根据由曲率监视器系统测量的半导体外延结构的曲率值来控制沉积设备停止沉积缓冲层，第一外延层，插入层和第二外延层。 上述用于制造半导体外延结构的系统能够有效地控制生长期间的半导体外延结构的应变。 还公开了半导体外延结构的制造方法。