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公开(公告)号：US20160254448A1
公开(公告)日：2016-09-01
申请号：US15032913
申请日：2013-11-12
Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
Inventor： Byungjoon Choi , Jianhua Yang , R. Stanley Williams , Gary Gibson , Warren Jackson
IPC: H01L45/00
CPC classification number: H01L45/1226 , H01L27/2418 , H01L45/08 , H01L45/1233 , H01L45/1253 , H01L45/14 , H01L45/145 , H01L45/146 , H01L45/16
Abstract: A nonlinear memristor device with a three-layer selector includes a memristor in electrical series with a three-layer selector. The memristor comprises at least one electrically conducting layer and at least one electrically insulating layer. The three-layer selector comprises a three-layer structure selected from the group consisting of XN—XO—XN; XN—YO—ZN: XN—YO—XN; XO—XN—XO; XO—YN—XO; XO—YN—ZO; XO—YO—XO; XO—YO—ZO; XN—YN—ZN; and XN—YN—XN, X represents a compound-forming metal different from Y and Z.
Abstract translation: 具有三层选择器的非线性忆阻器装置包括与三层选择器电连接的忆阻器。 忆阻器包括至少一个导电层和至少一个电绝缘层。 三层选择器包括从XN-XO-XN组成的组中选择的三层结构; XN-YO-ZN：XN-YO-XN; XO-XN-XO; XO-YN-XO; XO-YN-ZO; XO-YO-XO; XO-YO-ZO; XN-YN-ZN; 和XN-YN-XN，X表示不同于Y和Z的化合物形成金属。
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公开(公告)号：US09905757B2
公开(公告)日：2018-02-27
申请号：US15032913
申请日：2013-11-12
Applicant: Hewlett Packard Enterprise Development LP
Inventor： Byungjoon Choi , Jianhua Yang , R. Stanley Williams , Gary Gibson , Warren Jackson
CPC classification number: H01L45/1226 , H01L27/2418 , H01L45/08 , H01L45/1233 , H01L45/1253 , H01L45/14 , H01L45/145 , H01L45/146 , H01L45/16
Abstract: A nonlinear memristor device with a three-layer selector includes a memristor in electrical series with a three-layer selector. The memristor comprises at least one electrically conducting layer and at least one electrically insulating layer. The three-layer selector comprises a three-layer structure selected from the group consisting of XN—XO—XN; XN—YO—ZN; XN—YO—XN; XO—XN—XO; XO—YN—XO; XO—YN—ZO; XO—YO—XO; XO—YO—ZO; XN—YN—ZN; and XN—YN—XN, X represents a compound-forming metal different from Y and Z.
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