公开(公告)号：US20160315256A1

公开(公告)日：2016-10-27

申请号：US15103604

申请日：2013-12-13

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Ning Ge ,  Jianhua Yang ,  Chaw Sing Ho

IPC: H01L45/00 ,  H01L27/24

CPC classification number: H01L45/1273 ,  H01L27/2463 ,  H01L45/08 ,  H01L45/085 ,  H01L45/122 ,  H01L45/1233 ,  H01L45/145 ,  H01L45/146 ,  H01L45/16 ,  H01L45/1608 ,  H01L45/1675

Abstract: A resistive memory element is provided, having a bottom electrode, a top electrode, and an active region sandwiched therebetween. The resistance memory element has a V-shape. Methods of manufacturing the V-shape resistive memory element and crossbar structures employing the V-shape resistive memory element are also provided.

Abstract translation: 提供了一种电阻式存储元件，其具有底部电极，顶部电极和夹在其间的有源区域。 电阻存储元件具有V形。 还提供了使用V形电阻性存储元件制造V形电阻性存储元件和横梁结构的方法。