Fluid Ejection Apparatuses Including a Substrate with a Bulk Layer and a Epitaxial Layer
    1.
    发明申请
    Fluid Ejection Apparatuses Including a Substrate with a Bulk Layer and a Epitaxial Layer 有权
    流体喷射装置包括具有块层和外延层的基板

    公开(公告)号:US20160129690A1

    公开(公告)日:2016-05-12

    申请号:US14890551

    申请日:2013-06-28

    Abstract: Examples of fluid ejection apparatuses and methods for making fluid ejection apparatuses are described. An example method may include forming a fluid feed slot in a bulk layer of a substrate, forming a plurality of ink feed channels in at least an epitaxial layer of the substrate, each of the ink feed channels fluidically coupled to the fluid feed slot, and forming a plurality of drop generators over the substrate such that the epitaxial layer of the substrate is between the plurality of drop generators and the bulk layer and such that the each of the drop generators is fluidically coupled to the fluid feed slot by at least one of the ink feed channels.

    Abstract translation: 对流体喷射装置和制造流体喷射装置的方法进行说明。 一个示例性方法可以包括在衬底的本体层中形成流体馈送槽,在衬底的至少外延层中形成多个供墨通道,每个供墨通道流体耦合到流体供给槽,以及 在所述衬底上形成多个液滴发生器,使得所述衬底的所述外延层位于所述多个液滴发生器和所述主体层之间,并且使得所述液滴发生器中的每一个通过以下中的至少一个流体耦合到所述流体供给槽 供墨通道。

    INK PROPERTY SENSING ON A PRINTHEAD
    3.
    发明申请
    INK PROPERTY SENSING ON A PRINTHEAD 有权
    油墨感觉在印度

    公开(公告)号:US20160339696A1

    公开(公告)日:2016-11-24

    申请号:US15114967

    申请日:2014-01-31

    Abstract: Ink property sensing on a printhead is described. In an example, a substrate for a printhead includes a cap layer having bores. Chambers are formed beneath the cap layer in fluidic communication with the bores. Fluid ejectors are disposed in at least a portion of the chambers. At least one ion-sensitive field effect transistor (ISFET) is disposed in a respective at least one of the chambers. An electrode is disposed in each of the chambers having an ISFET and capacitively coupled to said ISFET through a dielectric.

    Abstract translation: 描述了在打印头上的油墨特性感测。 在一个示例中,用于打印头的基板包括具有孔的盖层。 腔室形成在帽层之下,与孔流体连通。 流体喷射器设置在腔室的至少一部分中。 至少一个离子敏感场效应晶体管(ISFET)设置在相应的至少一个室中。 电极设置在具有ISFET的每个室中,并通过电介质电容耦合到所述ISFET。

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