公开(公告)号：US20170250223A1

公开(公告)日：2017-08-31

申请号：US15521588

申请日：2014-11-19

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

Inventor： Ning GE ,  Vincent Nguyen ,  Jianhua Yang ,  Chanh Hua ,  Lidia Warnes ,  David B. Fujii

IPC: H01L27/24 ,  H05K1/16 ,  H05K3/06 ,  H01L45/00

CPC classification number: H01L27/2463 ,  G11C2213/77 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/145 ,  H01L45/146 ,  H01L45/147 ,  H01L45/16 ,  H01L45/1608 ,  H05K1/16 ,  H05K1/167 ,  H05K3/061 ,  H05K3/4685 ,  H05K2201/10159

Abstract: Provided in one example is an article. The article including: a first electrode; a switching layer disposed over at least a portion of the first electrode, the switching layer including a metal oxide; and a second electrode disposed over at least a portion of the switching layer. The first electrode, the switching layer, and the second electrode are parts of a resistive random-access memory, and one or both of the first electrode and the second electrode is a part of a layer of a printed circuit board.