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1.发明授权Determining whether a right to use memory modules in a reliability mode has been acquired 有权确定是否获得了以可靠性模式使用内存模块的权利公开(公告)号：US08812915B2
公开(公告)日：2014-08-19
申请号：US13628659
申请日：2012-09-27
Applicant: Hewlett-Packard Development Company, L.P.
Inventor： Lidia Warnes , Russ W. Herrell , Blaine D. Gaither
IPC: G06F11/00
CPC classification number: G06F11/1008
Abstract: Examples disclosed herein relate to determining whether a right to use memory modules in a reliability mode has been acquired. Examples include determining whether the right to use a plurality of memory modules in a reliability mode has been acquired, if a performance mode is selected for operation of the plurality of memory modules.
Abstract translation: 本文公开的示例涉及确定是否已经获得了以可靠性模式使用存储器模块的权利。 例如，如果选择了用于多个存储器模块的操作的性能模式，则确定是否已经获取了以可靠性模式使用多个存储器模块的权利。
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公开(公告)号：US20160103726A1
公开(公告)日：2016-04-14
申请号：US14894220
申请日：2013-05-31
Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
Inventor： Melvin K. Benedict , Andrew C. Walton , Lidia Warnes
IPC: G06F11/07
CPC classification number: G06F11/079 , G06F3/0619 , G06F11/073 , G06F11/0751 , G06F11/076 , G06F11/0787 , G06F11/1004
Abstract: A technique includes accessing error information generated in response to memory errors of a memory device. The error information generated in response to the memory errors of the memory device may then be determined as indicative of a row hammer error for the memory device.
Abstract translation: 一种技术包括访问响应于存储器设备的存储器错误而生成的错误信息。 然后可以将响应于存储器件的存储器错误而产生的错误信息确定为指示存储器件的行锤错误。
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公开(公告)号：US09442801B2
公开(公告)日：2016-09-13
申请号：US14498616
申请日：2014-09-26
Applicant: Hewlett-Packard Development Company, L.P.
Inventor： Melvin K. Benedict , Lidia Warnes
CPC classification number: G06F11/1076 , G06F11/106
Abstract: An example device includes a first error corrector to perform platform error correction based on a stride length. A memory includes a second error corrector that is to perform on-memory error correction that is to be disabled for platform error correction.
Abstract translation: 示例性装置包括第一误差校正器，用于基于步幅长度来执行平台纠错。 存储器包括第二错误校正器，其将执行对于平台错误校正被禁用的存储器内部错误校正。
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Patent Agency Ranking
公开(公告)号：US20150363261A1
公开(公告)日：2015-12-17
申请号：US14764210
申请日：2013-01-31
Applicant: Hewlett-Packard Development Company, L.P.
Inventor： Lidia Warnes , Andrew C Walton
CPC classification number: G06F11/106 , G11C11/406 , G11C11/40611 , G11C11/40615 , G11C29/023 , G11C29/028 , G11C29/20 , G11C29/42 , G11C29/50004 , G11C2029/0409 , G11C2029/5004 , G11C2211/4061 , G11C2211/4062
Abstract: A refresh rate of a random-access memory (RAM) is increased if a number of errors is greater than an error threshold and the refresh rate has not reached a maximum rate. The refresh rate of the RAM is set to a normal rate if the number of errors is less than or equal to the error threshold.
Abstract translation: 如果多个错误大于错误阈值并且刷新率未达到最大速率，则随机存取存储器（RAM）的刷新率增加。 如果错误的数量小于或等于错误阈值，则RAM的刷新率被设置为正常速率。
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公开(公告)号：US20170250223A1
公开(公告)日：2017-08-31
申请号：US15521588
申请日：2014-11-19
Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
Inventor： Ning GE , Vincent Nguyen , Jianhua Yang , Chanh Hua , Lidia Warnes , David B. Fujii
CPC classification number: H01L27/2463 , G11C2213/77 , H01L45/08 , H01L45/1233 , H01L45/1253 , H01L45/145 , H01L45/146 , H01L45/147 , H01L45/16 , H01L45/1608 , H05K1/16 , H05K1/167 , H05K3/061 , H05K3/4685 , H05K2201/10159
Abstract: Provided in one example is an article. The article including: a first electrode; a switching layer disposed over at least a portion of the first electrode, the switching layer including a metal oxide; and a second electrode disposed over at least a portion of the switching layer. The first electrode, the switching layer, and the second electrode are parts of a resistive random-access memory, and one or both of the first electrode and the second electrode is a part of a layer of a printed circuit board.
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公开(公告)号：US20160092306A1
公开(公告)日：2016-03-31
申请号：US14498616
申请日：2014-09-26
Applicant: Hewlett-Packard Development Company, L.P.
Inventor： Melvin K. Benedict , Lidia Warnes
IPC: G06F11/10
CPC classification number: G06F11/1076 , G06F11/106
Abstract: An example device in accordance with an aspect of the present disclosure includes a first error corrector to perform platform error correction based on a stride length. A memory includes a second error corrector that is to perform on-memory error correction that is to be disabled for platform error correction.
Abstract translation: 根据本公开的一个方面的示例性装置包括：第一误差校正器，用于基于步幅长度执行平台误差校正。 存储器包括第二错误校正器，其将执行对于平台错误校正被禁用的存储器内部错误校正。
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7.发明申请公开(公告)号：US20150294711A1
公开(公告)日：2015-10-15
申请号：US14410629
申请日：2012-10-22
Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
Inventor： Blaine D. Gaither , Darel N. Emmot , Lidia Warnes
IPC: G11C11/406 , G11C7/10
CPC classification number: G11C11/40618 , G11C7/1072 , G11C11/40611 , G11C2211/4065
Abstract: An access of data in a memory device is sampled. In response to the sampled access of data, a refresh operation is performed in the memory device.
Abstract translation: 对存储器件中的数据进行采样。 响应于数据的采样访问，在存储器件中执行刷新操作。
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8.发明申请DETERMINING WHETHER A RIGHT TO USE MEMORY MODULES IN A RELIABILITY MODE HAS BEEN ACQUIRED 有权确定在可靠性模式下使用存储器模块的权限已被获取公开(公告)号：US20140089726A1
公开(公告)日：2014-03-27
申请号：US13628659
申请日：2012-09-27
Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
Inventor： Lidia Warnes , Russ W. Herrell , Blaine D. Gaither
IPC: G06F11/26
CPC classification number: G06F11/1008
Abstract: Examples disclosed herein relate to determining whether a right to use memory modules in a reliability mode has been acquired. Examples include determining whether the right to use a plurality of memory modules in a reliability mode has been acquired, if a performance mode is selected for operation of the plurality of memory modules.
Abstract translation: 本文公开的示例涉及确定是否已经获得了以可靠性模式使用存储器模块的权利。 例如，如果选择了用于多个存储器模块的操作的性能模式，则确定是否已经获取了以可靠性模式使用多个存储器模块的权利。
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