公开(公告)号：US09676187B2

公开(公告)日：2017-06-13

申请号：US14787233

申请日：2013-07-29

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

Inventor： Ning Ge ,  Mun Hooi Yaow ,  Bee Ling Peh

IPC: B41J2/05 ,  B41J2/14 ,  B41J2/16

CPC classification number: B41J2/14032 ,  B41J2/14016 ,  B41J2/14072 ,  B41J2/1412 ,  B41J2/14129 ,  B41J2/1601 ,  B41J2/1626 ,  B41J2/164

Abstract: A fluid ejection device is described. In an example, a device includes a substrate having a chamber formed thereon to contain a fluid. A metal layer includes a resistor under the chamber having a surface thermally coupled to the chamber. At least one layer is deposited on the metal layer. A polysilicon layer is under the metal layer comprising a polysilicon structure under the resistor to change topography of the resistor such that the surface is uneven.

公开(公告)号：US11038033B2

公开(公告)日：2021-06-15

申请号：US15306740

申请日：2014-04-30

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

Inventor： Reynaldo V Villavelez ,  Ning Ge ,  Mun Hooi Yaow ,  Erik D Ness ,  David B Novak

IPC: H01L29/43 ,  H01L29/423 ,  H01L21/28 ,  H01L49/02

Abstract: The present subject matter relates to an integrated circuit. The integrated circuit includes a first metal layer and a second metal layer capacitively coupled to the first metal layer through a dielectric layer. Further, the second metal layer includes an electron leakage path to provide for leakage of charge from the second metal layer in a predetermined leak time period.

公开(公告)号：US09914297B2

公开(公告)日：2018-03-13

申请号：US15594068

申请日：2017-05-12

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

Inventor： Ning Ge ,  Mun Hooi Yaow ,  Bee Ling Peh

IPC: B41J2/14

CPC classification number: B41J2/14032 ,  B41J2/14016 ,  B41J2/14072 ,  B41J2/1412 ,  B41J2/14129 ,  B41J2/1601 ,  B41J2/1626 ,  B41J2/164

Abstract: A fluid ejection device is described. In an example, a device includes a substrate having a chamber formed thereon to contain a fluid. A metal layer includes a resistor under the chamber having a surface thermally coupled to the chamber. At least one layer is deposited on the metal layer. A polysilicon layer is under the metal layer comprising a polysilicon structure under the resistor to change topography of the resistor such that the surface is uneven.

公开(公告)号：US09849672B2

公开(公告)日：2017-12-26

申请号：US15127548

申请日：2014-04-03

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

Inventor： Ning Ge ,  Hang-Ru Goy ,  Boon Bing Ng ,  Shane O'Brien ,  Mun Hooi Yaow

IPC: B41J2/14 ,  B41J2/16 ,  B41J2/045

CPC classification number: B41J2/14112 ,  B41J2/04533 ,  B41J2/14056 ,  B41J2/14129 ,  B41J2/1601 ,  B41J2/1632 ,  B41J2202/13

Abstract: An example provides a fluid ejection apparatus including a first firing resistor and a second firing resistor to selectively cause fluid to be ejected through a single nozzle, and a parasitic resistor arranged to add a parasitic resistance to the first firing resistor.

公开(公告)号：US20170246866A1

公开(公告)日：2017-08-31

申请号：US15594068

申请日：2017-05-12

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

Inventor： Ning Ge ,  Mun Hooi Yaow ,  Bee Ling Peh

IPC: B41J2/14

CPC classification number: B41J2/14032 ,  B41J2/14016 ,  B41J2/14072 ,  B41J2/1412 ,  B41J2/14129 ,  B41J2/1601 ,  B41J2/1626 ,  B41J2/164

Abstract: A fluid ejection device is described. In an example, a device includes a substrate having a chamber formed thereon to Ncontain a fluid. A metal layer includes a resistor under the chamber having a surface thermally coupled to the chamber. At least one layer is deposited on the metal layer. A polysilicon layer is under the metal layer comprising a polysilicon structure under the resistor to change topography of the resistor such that the surface is uneven.

公开(公告)号：US20170151783A1

公开(公告)日：2017-06-01

申请号：US15127548

申请日：2014-04-03

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

Inventor： Ning GE ,  Hang-Ru GOY ,  Boon Bing NG ,  Shane O'Brien ,  Mun Hooi Yaow

IPC: B41J2/14 ,  B41J2/16

CPC classification number: B41J2/14112 ,  B41J2/04533 ,  B41J2/14056 ,  B41J2/14129 ,  B41J2/1601 ,  B41J2/1632 ,  B41J2202/13

Abstract: An example provides a fluid ejection apparatus including a first firing resistor and a second firing resistor to selectively cause fluid to be ejected through a single nozzle, and a parasitic resistor arranged to add a parasitic resistance to the first firing resistor.

公开(公告)号：US20160114580A1

公开(公告)日：2016-04-28

申请号：US14787233

申请日：2013-07-29

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

Inventor： Ning Ge ,  Mun Hooi Yaow ,  Bee Ling Peh

IPC: B41J2/14 ,  B41J2/16

CPC classification number: B41J2/14032 ,  B41J2/14016 ,  B41J2/14072 ,  B41J2/1412 ,  B41J2/14129 ,  B41J2/1601 ,  B41J2/1626 ,  B41J2/164

Abstract: A fluid ejection device is described. In an example, a device includes a substrate having a chamber formed thereon to contain a fluid. A metal layer includes a resistor under the chamber having a surface thermally coupled to the chamber. At least one layer is deposited on the metal layer. A polysilicon layer is under the metal layer comprising a polysilicon structure under the resistor to change topography of the resistor such that the surface is uneven.

Abstract translation: 描述了流体喷射装置。 在一个示例中，装置包括具有形成在其上以容纳流体的腔室的基底。 金属层包括在腔室下面的电阻器，其具有热耦合到腔室的表面。 在金属层上沉积至少一层。 多晶硅层位于电阻器下方的包含多晶硅结构的金属层下，以改变电阻器的形貌，使得表面不均匀。