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公开(公告)号：US09914297B2
公开(公告)日：2018-03-13
申请号：US15594068
申请日：2017-05-12
Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
Inventor： Ning Ge , Mun Hooi Yaow , Bee Ling Peh
IPC: B41J2/14
CPC classification number: B41J2/14032 , B41J2/14016 , B41J2/14072 , B41J2/1412 , B41J2/14129 , B41J2/1601 , B41J2/1626 , B41J2/164
Abstract: A fluid ejection device is described. In an example, a device includes a substrate having a chamber formed thereon to contain a fluid. A metal layer includes a resistor under the chamber having a surface thermally coupled to the chamber. At least one layer is deposited on the metal layer. A polysilicon layer is under the metal layer comprising a polysilicon structure under the resistor to change topography of the resistor such that the surface is uneven.
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公开(公告)号：US09676187B2
公开(公告)日：2017-06-13
申请号：US14787233
申请日：2013-07-29
Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
Inventor： Ning Ge , Mun Hooi Yaow , Bee Ling Peh
CPC classification number: B41J2/14032 , B41J2/14016 , B41J2/14072 , B41J2/1412 , B41J2/14129 , B41J2/1601 , B41J2/1626 , B41J2/164
Abstract: A fluid ejection device is described. In an example, a device includes a substrate having a chamber formed thereon to contain a fluid. A metal layer includes a resistor under the chamber having a surface thermally coupled to the chamber. At least one layer is deposited on the metal layer. A polysilicon layer is under the metal layer comprising a polysilicon structure under the resistor to change topography of the resistor such that the surface is uneven.
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公开(公告)号：US20210368063A1
公开(公告)日：2021-11-25
申请号：US16500381
申请日：2018-06-29
Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
Inventor： Simon Wong , Bee Ling Peh , David B Novak
Abstract: Examples techniques to determine print material subscription plans for image rendering devices are described. In an example, data indicative of print material consumption by an image rendering device for a period of time is received at a server. Based on the received data, a print material subscription plan is determined for the image rendering device. Signals to enable provision of a notification corresponding to first print material subscription plan are transmitted to the image rendering device.
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Patent Agency Ranking
公开(公告)号：US20170246866A1
公开(公告)日：2017-08-31
申请号：US15594068
申请日：2017-05-12
Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
Inventor： Ning Ge , Mun Hooi Yaow , Bee Ling Peh
IPC: B41J2/14
CPC classification number: B41J2/14032 , B41J2/14016 , B41J2/14072 , B41J2/1412 , B41J2/14129 , B41J2/1601 , B41J2/1626 , B41J2/164
Abstract: A fluid ejection device is described. In an example, a device includes a substrate having a chamber formed thereon to Ncontain a fluid. A metal layer includes a resistor under the chamber having a surface thermally coupled to the chamber. At least one layer is deposited on the metal layer. A polysilicon layer is under the metal layer comprising a polysilicon structure under the resistor to change topography of the resistor such that the surface is uneven.
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公开(公告)号：US20160114580A1
公开(公告)日：2016-04-28
申请号：US14787233
申请日：2013-07-29
Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
Inventor： Ning Ge , Mun Hooi Yaow , Bee Ling Peh
CPC classification number: B41J2/14032 , B41J2/14016 , B41J2/14072 , B41J2/1412 , B41J2/14129 , B41J2/1601 , B41J2/1626 , B41J2/164
Abstract: A fluid ejection device is described. In an example, a device includes a substrate having a chamber formed thereon to contain a fluid. A metal layer includes a resistor under the chamber having a surface thermally coupled to the chamber. At least one layer is deposited on the metal layer. A polysilicon layer is under the metal layer comprising a polysilicon structure under the resistor to change topography of the resistor such that the surface is uneven.
Abstract translation: 描述了流体喷射装置。 在一个示例中，装置包括具有形成在其上以容纳流体的腔室的基底。 金属层包括在腔室下面的电阻器，其具有热耦合到腔室的表面。 在金属层上沉积至少一层。 多晶硅层位于电阻器下方的包含多晶硅结构的金属层下，以改变电阻器的形貌，使得表面不均匀。
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公开(公告)号：US11323588B2
公开(公告)日：2022-05-03
申请号：US16500381
申请日：2018-06-29
Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
Inventor： Simon Wong , Bee Ling Peh , David B Novak
Abstract: Examples techniques to determine print material subscription plans for image rendering devices are described. In an example, data indicative of print material consumption by an image rendering device for a period of time is received at a server. Based on the received data, a print material subscription plan is determined for the image rendering device. Signals to enable provision of a notification corresponding to first print material subscription plan are transmitted to the image rendering device.
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公开(公告)号：US09864524B2
公开(公告)日：2018-01-09
申请号：US15416813
申请日：2017-01-26
Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
Inventor： Ning Ge , Paul I. Mikulan , Bee Ling Peh
CPC classification number: G06F3/061 , B41J2/04541 , B41J2/04581 , B41J2/04586 , G06F3/0655 , G06F3/0688 , G11C11/5621 , G11C16/0433 , G11C16/0458 , H01L27/11521 , H01L29/7881 , H01L29/7887
Abstract: An integrated circuit including a first EPROM, a second EPROM, and a circuit. The first EPROM is configured to provide a first state and a second state. The second EPROM is configured to provide a third state and a fourth state. The circuit is configured to select the first EPROM and the second EPROM individually and in parallel with each other.
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公开(公告)号：US20150367639A1
公开(公告)日：2015-12-24
申请号：US14837899
申请日：2015-08-27
Applicant: Hewlett-Packard Development Company, L.P.
Inventor： Ning Ge , Bee Ling Peh , Trudy Benjamin , Ken Kiat Ng , Jianhui Gu
CPC classification number: B41J2/1433 , B23K26/384 , B41J2/14145 , B41J2/14201 , B41J2/162 , B41J2/1634 , B41J2/175 , B41J2002/14419 , Y10T29/49401 , Y10T29/49403
Abstract: The present disclosure describes a compound slot, and systems and methods of forming the compound slot. An example of a compound slot includes a wafer, where the compound slot includes a trench along a long axis of the compound slot and on a top surface of the wafer, where the trench passes through an initial portion of a total depth of the wafer. A number of openings pass through a remaining portion of the total depth of the wafer, where at least a retained portion of a bottom of the trench is present around a perimeter of each of the number of openings.
Abstract translation: 本公开描述了复合槽，以及形成复合槽的系统和方法。 复合槽的示例包括晶片，其中复合槽包括沿着复合槽的长轴的沟槽和晶片的顶表面，其中沟槽穿过晶片的总深度的初始部分。 多个开口穿过晶片的总深度的剩余部分，其中至少沟槽底部的保留部分围绕每个开口的周边存在。
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