公开(公告)号：US20160244885A1

公开(公告)日：2016-08-25

申请号：US15033015

申请日：2013-10-30

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

Inventor： Roger A. McKay ,  Patrick W. Sadik

IPC: C23F1/16

CPC classification number: B81C1/00539 ,  B81B2201/058 ,  B81C1/00119 ,  B81C2201/0115 ,  B81C2201/014 ,  C23C14/5873 ,  C23F1/02 ,  C23F1/16 ,  H01M4/0492 ,  H01M4/386

Abstract: Etching islands are formed on a first face of a substrate and a second face of the substrate non-parallel to the first face. The first face and the second face of the substrate are concurrently exposed to a solution that reacts with the etching islands to concurrently form porous regions extending into the first face and the second face.

Abstract translation: 在基板的第一面和不平行于第一面的基板的第二面上形成蚀刻岛。 衬底的第一面和第二面同时暴露于与蚀刻岛反应的溶液，以同时形成延伸到第一面和第二面的多孔区域。

公开(公告)号：US10086317B2

公开(公告)日：2018-10-02

申请号：US15033000

申请日：2013-10-30

Applicant: Hewlett-Packard Development Company, L.P.

Inventor： Roger A. McKay ,  Patrick W. Sadik

IPC: C23F1/00 ,  B01D35/02 ,  B01D29/00 ,  B81B7/00 ,  B01D69/02 ,  B01D67/00 ,  B81C1/00 ,  C23C14/58 ,  C23C18/16 ,  C23F1/02

Abstract: A method comprises forming etching islands on a substrate and exposing the substrate with etching islands to a solution that reacts with the etching islands to form a filter passage of interconnected pores in the substrate. The filter passage has an inlet into the substrate and an outlet from the substrate.

公开(公告)号：US09938139B2

公开(公告)日：2018-04-10

申请号：US15033015

申请日：2013-10-30

Applicant: Hewlett-Packard Development Company, L.P.

Inventor： Roger A. McKay ,  Patrick W. Sadik

IPC: B81C1/00 ,  H01M4/38 ,  H01M4/04 ,  C23C14/58 ,  C23F1/16 ,  C23F1/02

CPC classification number: B81C1/00539 ,  B81B2201/058 ,  B81C1/00119 ,  B81C2201/0115 ,  B81C2201/014 ,  C23C14/5873 ,  C23F1/02 ,  C23F1/16 ,  H01M4/0492 ,  H01M4/386

Abstract: Etching islands are formed on a first face of a substrate and a second face of the substrate non-parallel to the first face. The first face and the second face of the substrate are concurrently exposed to a solution that reacts with the etching islands to concurrently form porous regions extending into the first face and the second face.