公开(公告)号：US09793322B2

公开(公告)日：2017-10-17

申请号：US14700972

申请日：2015-04-30

Applicant: Hewlett-Packard Development Company, L.P.

Inventor： Ning Ge ,  Jianhua Yang ,  Stanley Williams ,  Kyung Min Kim

IPC: H01L45/00 ,  H01L27/24

CPC classification number: H01L27/2463 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1633

Abstract: In an example, an apparatus includes an electrically conductive component having a first side and a second side, a first switching material formed on the first side of the electrically conductive component, and a second switching material formed on the second side of the electrically conductive component. The second switching material may include a different material than the first switching material and resistance states of each of the first switching material and the second switching material are to be modified through application of electric fields through the first switching material and the second switching material. The apparatus may also include an electrode in contact with one of the first switching material and the second switching material.

公开(公告)号：US08890106B2

公开(公告)日：2014-11-18

申请号：US13718689

申请日：2012-12-18

Applicant: Hewlett-Packard Development Company, L.P.

Inventor： Jianhua Yang ,  Gilberto Medeiros Ribeiro ,  Byung-Joon Choi ,  Stanley Williams

IPC: H01L29/02 ,  H01L27/04 ,  H01L21/77

CPC classification number: H01L21/77 ,  G11C13/0007 ,  G11C13/003 ,  G11C2213/32 ,  G11C2213/34 ,  G11C2213/79 ,  H01L27/0605 ,  H01L27/0738 ,  H01L27/2436 ,  H01L29/2003 ,  H01L29/7787 ,  H01L45/08 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/145 ,  H01L45/146 ,  H01L45/16

Abstract: A hybrid circuit comprises a nitride-based transistor portion and a memristor portion. The transistor includes a source and a drain and a gate for controlling conductance of a channel region between the source and the drain. The memristor includes a first electrode and a second electrode separated by an active switching region. The source or drain of the transistor forms one of the electrodes of the memristor.

Abstract translation: 混合电路包括氮化物基晶体管部分和忆阻器部分。 晶体管包括源极和漏极以及用于控制源极和漏极之间的沟道区域的电导的栅极。 忆阻器包括由有源开关区域分开的第一电极和第二电极。 晶体管的源极或漏极形成忆阻器的电极之一。

公开(公告)号：US20140166957A1

公开(公告)日：2014-06-19

申请号：US13718689

申请日：2012-12-18

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

Inventor： Jianhua Yang ,  Gilberto Medeiros Ribeiro ,  Byung-Joon Choi ,  Stanley Williams

IPC: H01L27/04 ,  H01L21/77

CPC classification number: H01L21/77 ,  G11C13/0007 ,  G11C13/003 ,  G11C2213/32 ,  G11C2213/34 ,  G11C2213/79 ,  H01L27/0605 ,  H01L27/0738 ,  H01L27/2436 ,  H01L29/2003 ,  H01L29/7787 ,  H01L45/08 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/145 ,  H01L45/146 ,  H01L45/16

Abstract: A hybrid circuit comprises a nitride-based transistor portion and a memristor portion. The transistor includes a source and a drain and a gate for controlling conductance of a channel region between the source and the drain. The memristor includes a first electrode and a second electrode separated by an active switching region. The source or drain of the transistor forms one of the electrodes of the memristor.

Abstract translation: 混合电路包括氮化物基晶体管部分和忆阻器部分。 晶体管包括源极和漏极以及用于控制源极和漏极之间的沟道区域的电导的栅极。 忆阻器包括由有源开关区域分开的第一电极和第二电极。 晶体管的源极或漏极形成忆阻器的电极之一。