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公开(公告)号：US08890106B2
公开(公告)日：2014-11-18
申请号：US13718689
申请日：2012-12-18
Applicant: Hewlett-Packard Development Company, L.P.
Inventor： Jianhua Yang , Gilberto Medeiros Ribeiro , Byung-Joon Choi , Stanley Williams
CPC classification number: H01L21/77 , G11C13/0007 , G11C13/003 , G11C2213/32 , G11C2213/34 , G11C2213/79 , H01L27/0605 , H01L27/0738 , H01L27/2436 , H01L29/2003 , H01L29/7787 , H01L45/08 , H01L45/085 , H01L45/1233 , H01L45/145 , H01L45/146 , H01L45/16
Abstract: A hybrid circuit comprises a nitride-based transistor portion and a memristor portion. The transistor includes a source and a drain and a gate for controlling conductance of a channel region between the source and the drain. The memristor includes a first electrode and a second electrode separated by an active switching region. The source or drain of the transistor forms one of the electrodes of the memristor.
Abstract translation: 混合电路包括氮化物基晶体管部分和忆阻器部分。 晶体管包括源极和漏极以及用于控制源极和漏极之间的沟道区域的电导的栅极。 忆阻器包括由有源开关区域分开的第一电极和第二电极。 晶体管的源极或漏极形成忆阻器的电极之一。
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公开(公告)号：US20140091270A1
公开(公告)日：2014-04-03
申请号：US13629946
申请日：2012-09-28
Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
Inventor： Jianhua Yang , Minxian Max Zhang , Gilberto Medeiros Ribeiro , R. Stanley Williams
IPC: H01L45/00 , H01L21/8239
CPC classification number: H01L45/04 , G11C13/0007 , G11C2213/15 , G11C2213/32 , H01L45/1233 , H01L45/145 , H01L45/146
Abstract: Low energy memristors with engineered switching channel materials include: a first electrode; a second electrode; and a switching layer positioned between the first electrode and the second electrode, wherein the switching layer includes a first phase comprising an insulating matrix in which is dispersed a second phase comprising an electrically conducting compound material for forming a switching channel.
Abstract translation: 具有工程开关通道材料的低能忆阻器包括：第一电极; 第二电极; 以及位于所述第一电极和所述第二电极之间的开关层，其中所述开关层包括包含绝缘基质的第一相，其中分散有包含用于形成切换通道的导电复合材料的第二相。
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公开(公告)号：US20160043312A1
公开(公告)日：2016-02-11
申请号：US14775811
申请日：2013-03-13
Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
Inventor： Jianhua Yang , Minxian Max Zhang , Gilberto Medeiros Ribeiro , R. Stanley Williams
IPC: H01L45/00
CPC classification number: H01L45/145 , H01L45/08 , H01L45/1233 , H01L45/146 , H01L45/1608 , H01L45/1641
Abstract: A memristor with dopant-compensated switching, the memristor having a bottom electrode, a top electrode, and an active region sandwiched between the bottom electrode and the top electrode. The active region is made up of an electrically insulating material and an electrically conducting material. The insulating material includes compensating dopants to partially or fully compensate for native dopants in the insulating material. Methods for making the memristor are also disclosed.
Abstract translation: 具有掺杂剂补偿开关的忆阻器，具有底电极的忆阻器，顶电极和夹在底电极和顶电极之间的有源区。 有源区由电绝缘材料和导电材料构成。 绝缘材料包括补偿掺杂剂以部分或完全补偿绝缘材料中的天然掺杂剂。 制作忆阻器的方法也被披露。
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Patent Agency Ranking
公开(公告)号：US20130234103A1
公开(公告)日：2013-09-12
申请号：US13867335
申请日：2013-04-22
Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
Inventor： Jianhua Yang , R. Stanley Williams , Gilberto Medeiros Ribeiro
IPC: H01L45/00
CPC classification number: H01L45/1253 , H01L27/2463 , H01L45/10 , H01L45/1233 , H01L45/145 , H01L45/146 , H01L45/16 , H01L45/1625
Abstract: Nanoscale switching devices are disclosed. The devices have a first electrode of a nanoscale width; a second electrode of a nanoscale width; and a layer of an active region disposed between and in electrical contact with the first and second electrodes. The active region contains a switching material capable of carrying a significant amount of defects which can trap and de-trap electrons under electrical bias. The switching material is in an amorphous state. A nanoscale crossbar array containing a plurality of the devices and a method for making the devices are also disclosed.
Abstract translation: 公开了纳米级开关器件。 器件具有纳米级宽度的第一电极; 纳米级宽度的第二电极; 以及设置在第一和第二电极之间并与之电接触的有源区的层。 有源区域包含能承载大量缺陷的开关材料，其可以在电偏压下捕获和去除电子。 开关材料处于非晶状态。 还公开了一种包含多个器件的纳米级交叉开关阵列和用于制造器件的方法。
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公开(公告)号：US09478738B2
公开(公告)日：2016-10-25
申请号：US14845735
申请日：2015-09-04
Applicant: Hewlett-Packard Development Company, L.P.
Inventor： Feng Miao , Jianhua Yang , John Paul Strachan , Wei Yi , Gilberto Medeiros Ribeiro , R. Stanley Williams
CPC classification number: H01L45/08 , G11C13/0007 , G11C13/0011 , G11C2213/55 , H01L45/1233 , H01L45/141 , H01L45/142 , H01L45/145 , H01L45/146 , H01L45/147 , H01L45/148 , H01L45/149
Abstract: A memristor has a first electrode, a second electrode parallel to the first electrode, and a switching layer disposing between the first and second electrodes. The switching layer contains a conduction channel and a reservoir zone. The conduction channel has a Fermi glass material with a variable concentration of mobile ions. The reservoir zone is laterally disposed relative to the conduction channel, and functions as a source/sink of mobile ions for the conduction channel. In the switching operation, under the cooperative driving force of both electric field and thermal effects, the mobile ions are moved into or out of the laterally disposed reservoir zone to vary the concentration of the mobile ions in the conduction channel to change the conductivity of the Fermi glass material.
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公开(公告)号：US20150380643A1
公开(公告)日：2015-12-31
申请号：US14845735
申请日：2015-09-04
Applicant: Hewlett-Packard Development Company, L.P.
Inventor： Feng Miao , Jianhua Yang , John Paul Strachan , Wei Yi , Gilberto Medeiros Ribeiro , R. Stanley Williams
CPC classification number: H01L45/08 , G11C13/0007 , G11C13/0011 , G11C2213/55 , H01L45/1233 , H01L45/141 , H01L45/142 , H01L45/145 , H01L45/146 , H01L45/147 , H01L45/148 , H01L45/149
Abstract: A memristor has a first electrode, a second electrode parallel to the first electrode, and a switching layer disposing between the first and second electrodes. The switching layer contains a conduction channel and a reservoir zone. The conduction channel has a Fermi glass material with a variable concentration of mobile ions. The reservoir zone is laterally disposed relative to the conduction channel, and functions as a source/sink of mobile ions for the conduction channel. In the switching operation, under the cooperative driving force of both electric field and thermal effects, the mobile ions are moved into or out of the laterally disposed reservoir zone to vary the concentration of the mobile ions in the conduction channel to change the conductivity of the Fermi glass material.
Abstract translation: 忆阻器具有第一电极，平行于第一电极的第二电极和设置在第一和第二电极之间的开关层。 开关层包含导电通道和储存区。 导电通道具有可变浓度的移动离子的费米玻璃材料。 储存区相对于传导通道横向设置，并且用作导电通道的移动离子的源/汇。 在切换操作中，在电场和热效应的协同驱动力下，移动离子被移入或移出横向设置的储存区，以改变导电通道中的移动离子的浓度，以改变导电通道的导电性 费米玻璃材料。
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7.发明申请MEMRISTIVE DEVICES WITH LAYERED JUNCTIONS AND METHODS FOR FABRICATING THE SAME 审中-公开具有层状结构的测量装置及其制造方法公开(公告)号：US20150380464A1
公开(公告)日：2015-12-31
申请号：US14845636
申请日：2015-09-04
Applicant: Hewlett-Packard Development Company, L.P.
Inventor： Matthew D. Pickett , Jianhua Yang , Gilberto Medeiros Ribeiro
CPC classification number: H01L27/2463 , H01L45/06 , H01L45/08 , H01L45/12 , H01L45/1233 , H01L45/1253 , H01L45/146 , H01L45/1616
Abstract: Memristor systems and method for fabricating memristor system are disclosed. In one aspect, a memristor includes a first electrode, a second electrode, and a junction disposed between the first electrode and the second electrode. The junction includes at least one layer such that each layer has a plurality of dopant sub-layers disposed between insulating sub-layers. The sub-layers are oriented substantially parallel to the first and second electrodes.
Abstract translation: 记忆体系统和制造忆阻器系统的方法被公开。 一方面，忆阻器包括第一电极，第二电极和设置在第一电极和第二电极之间的结。 该结包括至少一个层，使得每个层具有设置在绝缘子层之间的多个掺杂剂子层。 子层的取向基本上平行于第一和第二电极。
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公开(公告)号：US20140166957A1
公开(公告)日：2014-06-19
申请号：US13718689
申请日：2012-12-18
Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
Inventor： Jianhua Yang , Gilberto Medeiros Ribeiro , Byung-Joon Choi , Stanley Williams
CPC classification number: H01L21/77 , G11C13/0007 , G11C13/003 , G11C2213/32 , G11C2213/34 , G11C2213/79 , H01L27/0605 , H01L27/0738 , H01L27/2436 , H01L29/2003 , H01L29/7787 , H01L45/08 , H01L45/085 , H01L45/1233 , H01L45/145 , H01L45/146 , H01L45/16
Abstract: A hybrid circuit comprises a nitride-based transistor portion and a memristor portion. The transistor includes a source and a drain and a gate for controlling conductance of a channel region between the source and the drain. The memristor includes a first electrode and a second electrode separated by an active switching region. The source or drain of the transistor forms one of the electrodes of the memristor.
Abstract translation: 混合电路包括氮化物基晶体管部分和忆阻器部分。 晶体管包括源极和漏极以及用于控制源极和漏极之间的沟道区域的电导的栅极。 忆阻器包括由有源开关区域分开的第一电极和第二电极。 晶体管的源极或漏极形成忆阻器的电极之一。
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