MEMRISTORS WITH DOPANT-COMPENSATED SWITCHING
    3.
    发明申请
    MEMRISTORS WITH DOPANT-COMPENSATED SWITCHING 审中-公开
    具有多重补偿开关的电容器

    公开(公告)号:US20160043312A1

    公开(公告)日:2016-02-11

    申请号:US14775811

    申请日:2013-03-13

    Abstract: A memristor with dopant-compensated switching, the memristor having a bottom electrode, a top electrode, and an active region sandwiched between the bottom electrode and the top electrode. The active region is made up of an electrically insulating material and an electrically conducting material. The insulating material includes compensating dopants to partially or fully compensate for native dopants in the insulating material. Methods for making the memristor are also disclosed.

    Abstract translation: 具有掺杂剂补偿开关的忆阻器,具有底电极的忆阻器,顶电极和夹在底电极和顶电极之间的有源区。 有源区由电绝缘材料和导电材料构成。 绝缘材料包括补偿掺杂剂以部分或完全补偿绝缘材料中的天然掺杂剂。 制作忆阻器的方法也被披露。

    NANOSCALE SWITCHING DEVICE WITH AN AMORPHOUS SWITCHING MATERIAL
    4.
    发明申请
    NANOSCALE SWITCHING DEVICE WITH AN AMORPHOUS SWITCHING MATERIAL 审中-公开
    具有非均质切换材料的纳米开关装置

    公开(公告)号:US20130234103A1

    公开(公告)日:2013-09-12

    申请号:US13867335

    申请日:2013-04-22

    Abstract: Nanoscale switching devices are disclosed. The devices have a first electrode of a nanoscale width; a second electrode of a nanoscale width; and a layer of an active region disposed between and in electrical contact with the first and second electrodes. The active region contains a switching material capable of carrying a significant amount of defects which can trap and de-trap electrons under electrical bias. The switching material is in an amorphous state. A nanoscale crossbar array containing a plurality of the devices and a method for making the devices are also disclosed.

    Abstract translation: 公开了纳米级开关器件。 器件具有纳米级宽度的第一电极; 纳米级宽度的第二电极; 以及设置在第一和第二电极之间并与之电接触的有源区的层。 有源区域包含能承载大量缺陷的开关材料,其可以在电偏压下捕获和去除电子。 开关材料处于非晶状态。 还公开了一种包含多个器件的纳米级交叉开关阵列和用于制造器件的方法。

    HIGH-RELIABILITY HIGH-SPEED MEMRISTOR
    6.
    发明申请
    HIGH-RELIABILITY HIGH-SPEED MEMRISTOR 有权
    高可靠性高速电容器

    公开(公告)号:US20150380643A1

    公开(公告)日:2015-12-31

    申请号:US14845735

    申请日:2015-09-04

    Abstract: A memristor has a first electrode, a second electrode parallel to the first electrode, and a switching layer disposing between the first and second electrodes. The switching layer contains a conduction channel and a reservoir zone. The conduction channel has a Fermi glass material with a variable concentration of mobile ions. The reservoir zone is laterally disposed relative to the conduction channel, and functions as a source/sink of mobile ions for the conduction channel. In the switching operation, under the cooperative driving force of both electric field and thermal effects, the mobile ions are moved into or out of the laterally disposed reservoir zone to vary the concentration of the mobile ions in the conduction channel to change the conductivity of the Fermi glass material.

    Abstract translation: 忆阻器具有第一电极,平行于第一电极的第二电极和设置在第一和第二电极之间的开关层。 开关层包含导电通道和储存区。 导电通道具有可变浓度的移动离子的费米玻璃材料。 储存区相对于传导通道横向设置,并且用作导电通道的移动离子的源/汇。 在切换操作中,在电场和热效应的协同驱动力下,移动离子被移入或移出横向设置的储存区,以改变导电通道中的移动离子的浓度,以改变导电通道的导电性 费米玻璃材料。

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