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Patent Agency Ranking
公开(公告)号：US09997703B2
公开(公告)日：2018-06-12
申请号：US14898380
申请日：2013-07-25
Applicant: Hewlett-Packard Development Company, L.P.
Inventor： Si-Ty Lam , Xia Sheng , Richard H. Henze , Zhang-Lin Zhou
CPC classification number: H01L45/1273 , H01L27/2463 , H01L45/08 , H01L45/1233 , H01L45/145 , H01L45/146 , H01L45/16 , H01L45/1608 , H01L45/1675
Abstract: A resistive memory device includes a bottom electrode and a top electrode sandwiching a switching layer. The device also includes a field enhancement (FE) feature that extends from the bottom electrode either into the switching layer or is covered by switching layer and that is to enhance an electric field generated by the two electrodes to thereby confine a switching area of the device at the FE feature. The device further includes a planar interlayer dielectric surrounding the device, for supporting the top electrode. A method of making a resistive memory device, employing in-situ vacuum deposition of all layers, is also provided.
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公开(公告)号：US20160141494A1
公开(公告)日：2016-05-19
申请号：US14898380
申请日：2013-07-25
Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
Inventor： Si-Ty Lam , Xia Sheng , Richard H. Henze , Zhang-Lin Zhou
CPC classification number: H01L45/1273 , H01L27/2463 , H01L45/08 , H01L45/1233 , H01L45/145 , H01L45/146 , H01L45/16 , H01L45/1608 , H01L45/1675
Abstract: A resistive memory device includes a bottom electrode and a top electrode sandwiching a switching layer. The device also includes a field enhancement (FE) feature that extends from the bottom electrode either into the switching layer or is covered by switching layer and that is to enhance an electric field generated by the two electrodes to thereby confine a switching area of the device at the FE feature. The device further includes a planar interlayer dielectric surrounding the device, for supporting the top electrode. A method of making a resistive memory device, employing in-situ vacuum deposition of all layers, is also provided.
Abstract translation: 电阻式存储器件包括底电极和夹着开关层的顶电极。 该装置还包括从底部电极延伸到开关层中或由开关层覆盖的场增强（FE）特征，并且其是增强由两个电极产生的电场，从而限制该装置的开关面积 在FE特征。 该器件还包括围绕器件的平面层间电介质，用于支撑顶部电极。 还提供了使用所有层的原位真空沉积来制造电阻式存储器件的方法。
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公开(公告)号：US20160141492A1
公开(公告)日：2016-05-19
申请号：US14898503
申请日：2013-07-31
Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
CPC classification number: H01L45/085 , H01L27/2463 , H01L45/08 , H01L45/1233 , H01L45/1253 , H01L45/142 , H01L45/145 , H01L45/146 , H01L45/16 , H01L45/1675 , H01L45/1691
Abstract: An example of the memristor includes a bottom electrode, a switchable material positioned on the bottom electrode, and a cured negative or positive resist that forms an interlayer dielectric positioned on the switchable material. An open area is formed in the interlayer dielectric. The open area exposes a surface of the switchable material. A top electrode is positioned in contact with the exposed surface of the switchable material at the open area.
Abstract translation: 忆阻器的示例包括底部电极，位于底部电极上的可切换材料以及形成位于可切换材料上的层间电介质的固化的负极或正性抗蚀剂。 在层间电介质中形成开放区域。 开放区域露出可切换材料的表面。 顶部电极定位成与开放区域处的可切换材料的暴露表面接触。
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公开(公告)号：US20140197369A1
公开(公告)日：2014-07-17
申请号：US13742939
申请日：2013-01-16
Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
Inventor： Xia Sheng , Zhang-Lin Zhou , Richard H. Henze
IPC: H01L45/00
CPC classification number: H01L45/1608 , B82Y10/00 , H01L45/08 , H01L45/1233 , H01L45/1246 , H01L45/146 , Y10S977/83
Abstract: A memristor structure has two electrodes sandwiching an insulating region, and includes a nanoparticle providing a conducting path between the two electrodes, wherein either the insulating region comprises an inorganic material and nanoparticle comprises a solid nanoparticle or a core/shell nanoparticle or the insulating region comprises an inorganic or organic material and the nanoparticle comprises a core/shell nanoparticle.
Abstract translation: 忆阻器结构具有夹着绝缘区域的两个电极，并且包括在两个电极之间提供导电路径的纳米颗粒，其中绝缘区域包括无机材料，并且纳米颗粒包含固体纳米颗粒或核/壳纳米颗粒，或绝缘区域包括 无机或有机材料，纳米颗粒包含核/壳纳米颗粒。
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公开(公告)号：US09035272B2
公开(公告)日：2015-05-19
申请号：US13742939
申请日：2013-01-16
Applicant: Hewlett-Packard Development Company, L.P.
Inventor： Xia Sheng , Zhang-Lin Zhou , Richard H. Henze
CPC classification number: H01L45/1608 , B82Y10/00 , H01L45/08 , H01L45/1233 , H01L45/1246 , H01L45/146 , Y10S977/83
Abstract: A memristor structure has two electrodes sandwiching an insulating region, and includes a nanoparticle providing a conducting path between the two electrodes, wherein either the insulating region comprises an inorganic material and nanoparticle comprises a solid nanoparticle or a core/shell nanoparticle or the insulating region comprises an inorganic or organic material and the nanoparticle comprises a core/shell nanoparticle.
Abstract translation: 忆阻器结构具有夹着绝缘区域的两个电极，并且包括在两个电极之间提供导电路径的纳米颗粒，其中绝缘区域包括无机材料，并且纳米颗粒包含固体纳米颗粒或核/壳纳米颗粒，或绝缘区域包括 无机或有机材料，纳米颗粒包含核/壳纳米颗粒。
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