公开(公告)号：US09570100B1

公开(公告)日：2017-02-14

申请号：US14918829

申请日：2015-10-21

Applicant: HGST Netherlands B.V.

Inventor： James Freitag ,  Zheng Gao ,  Stefan Maat

IPC: G11B5/39 ,  G11B5/11 ,  G11B5/33

CPC classification number: G11B5/3912 ,  G11B5/112 ,  G11B5/3948 ,  G11B5/397 ,  G11B5/398 ,  G11B5/4886

Abstract: A two-dimensional magnetic recording (TDMR) read head with an antiferromagnetic (AFM) layer recessed behind a center shield. The TDMR read head comprises a first read sensor and a center shield over the first read sensor, wherein the center shield has a first thickness at an air-bearing surface (ABS) and a second thickness at a back surface, the first thickness being greater than the second thickness. A ferromagnetic layer is disposed over a portion of the center shield, wherein the ferromagnetic layer is recessed from the ABS. The TDMR read head also includes an antiferromagnetic layer over the ferromagnetic layer and a second read sensor over the antiferromagnetic layer. By recessing the AFM layer away from the ABS, the down-track spacing between read sensors is reduced, thereby improving TDMR read head performance.

Abstract translation: 二维磁记录（TDMR）读头与反铁磁（AFM）层在中心屏蔽后面凹陷。 TDMR读取头包括在第一读取传感器上的第一读取传感器和中心屏蔽，其中中心屏蔽在空气轴承表面（ABS）处具有第一厚度，在后表面具有第二厚度，第一厚度更大 比第二厚度。 铁磁层设置在中心屏蔽的一部分上，其中铁磁层从ABS凹入。 TDMR读取头还包括在铁磁层上的反铁磁层和在反铁磁层上的第二读取传感器。 通过使AFM层远离ABS，读取传感器之间的下行轨道间距减小，从而提高TDMR读取头的性能。

公开(公告)号：US09831419B2

公开(公告)日：2017-11-28

申请号：US14797759

申请日：2015-07-13

Applicant: HGST Netherlands B.V.

Inventor： James Freitag ,  Zheng Gao

IPC: H01L43/08 ,  H01L27/22 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12

CPC classification number: H01L27/222 ,  G11B5/3906 ,  G11B5/3948 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: A magneto-resistive (MR) device and process for making the MR device are disclosed. The MR device has a pinned layer, a spacer layer proximate to the pinned layer, and a free layer proximate to the spacer layer. The free layer comprises a first magnetic layer proximate to the spacer layer, the first magnetic layer having a positive magnetostriction, a laminate magnetic insertion layer proximate to the first magnetic layer, and a second magnetic layer proximate to the magnetic insertion layer, the second magnetic layer having a negative magnetostriction. The laminate magnetic insertion layer has a first magnetic sublayer and a first non-magnetic sublayer proximate to the first magnetic sublayer. With the disclosed laminate magnetic insertion layer, the free layer has a low overall magnetostriction and results in a MR device with a high MR ratio.