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公开(公告)号：US12002677B2
公开(公告)日：2024-06-04
申请号：US17742440
申请日：2022-05-12
发明人： Chwung-Shan Kou , Wen-Yung Yeh
IPC分类号： H01L21/268 , H01L21/67
CPC分类号： H01L21/268 , H01L21/67115
摘要： A processing device and a processing method for a solid structure are used to perform a processing procedure on the solid structure. The processing device for the solid structure of the invention provides energy to the solid structure by various electromagnetic radiation sources to cause the solid structure to generate qualitative changes or defects, that is, to form a modified layer. Stress and/or hardness of the modified layer are/is different from that of other non-processed areas.
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公开(公告)号：US11889609B2
公开(公告)日：2024-01-30
申请号：US17742446
申请日：2022-05-12
发明人： Chwung-Shan Kou , Wen-Yung Yeh
摘要： Disclosed is an annealing system integrated with laser and microwave. The annealing system is provided with a microwave system, a laser system, and a measurement and control system. The microwave system provides a microwave energy to a first area of a to-be-annealed object for annealing the first area of the to-be-annealed object. The laser system uses a laser to provide a laser energy to a second area of the to-be-annealed object for annealing the second area of the to-be-annealed object. The measurement and control system monitors and controls a power of a microwave and/or a laser. The annealing system is capable of reducing a time required for an overall annealing, and also capable of avoiding cracks or defects caused by large stress differences.
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公开(公告)号：US12112958B2
公开(公告)日：2024-10-08
申请号：US18520647
申请日：2023-11-28
申请人： HIGHLIGHT TECH CORP.
IPC分类号： H01L21/304 , H01L21/67 , H01L21/673
CPC分类号： H01L21/67028 , H01L21/67 , H01L21/673 , H01L21/304
摘要： Disclosed is a wafer processing system comprising a processing tank, a cleaning device and a drying device. The processing tank has a cantilever rotating device and a dynamic balance correction device. The cantilever rotating device has a holding part for holding a wafer of a variety of specification parameters and causing the wafer to rotate along a rotating shaft of the cantilever rotating device. The dynamic balance correction device performs a corresponding dynamic balance correction on the cantilever rotating device, so that the cantilever rotating device is in a dynamic balance state during rotation. A dynamic nozzle unit of the cleaning device ejects a cleaning fluid to clean the rotating wafer. The drying device is used to dry the rotating wafer.
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公开(公告)号：US11833603B2
公开(公告)日：2023-12-05
申请号：US17742441
申请日：2022-05-12
申请人： HIGHLIGHT TECH CORP.
发明人： Chwung-Shan Kou , Wen-Yung Yeh
摘要： An electrical discharge machining apparatus and an electrical discharge machining method with adjustable machining parameters comprise a carrier and an electrical discharge machining (EDM) unit. The carrier is used for placing a to-be-machined object defined with a machining target area. A discharge electrode of the electrical discharge machining (EDM) unit is used to cut the machining target area of the to-be-machined object along a first cutting direction with at least one machining parameter, the machining parameter is correspondingly adjusted when a specified parameter of the to-be-machined object changes to a first numerical value, thereby using the adjusted machining parameter to perform a second cutting step on the machining target area of the to-be-machined object. A segmented cutting technology for solving a problem that a cutting speed (mm2/min) is slowed down and a total cutting time is prolonged due to changes of the specified parameter of electrical discharge machining cutting.
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公开(公告)号：US11895765B2
公开(公告)日：2024-02-06
申请号：US17686439
申请日：2022-03-04
发明人： Chwung-Shan Kou
IPC分类号： H05H1/46
CPC分类号： H05H1/463
摘要： A hybrid plasma source and an operation method thereof, the hybrid plasma source is formed by combining the mechanisms of microwave plasma and transformer coupled plasma for gas dissociation and chemical activation. A reaction chamber of the hybrid plasma source is composed of two microwave resonant chambers and sets of hollow metal tubes, after a high-intensity electric field is generated by the microwave resonant chambers to generate a plasma, a high power and high density plasma generated by the highly-efficient coupling mechanism of the transformer coupled plasma is capable of greatly improving a gas conductance, each set of the hollow metal tubes is driven by each set of ferrite transformer magnetic cores to disperse power, which reduces an energy density of each of the hollow metal tubes and reduces occurrence of plasma entering a contraction mode from a diffusion mode, thereby further improving an operable gas flow rate.
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