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公开(公告)号:US20100267198A1
公开(公告)日:2010-10-21
申请号:US12824568
申请日:2010-06-28
申请人: HISATO YABUTA , MASAFUMI SANO , TATSUYA IWASAKI , HIDEO HOSONO , Toshio Kamiya , KENJI NOMURA
发明人: HISATO YABUTA , MASAFUMI SANO , TATSUYA IWASAKI , HIDEO HOSONO , Toshio Kamiya , KENJI NOMURA
IPC分类号: H01L21/36
CPC分类号: H01L29/78618 , H01L29/66969 , H01L29/78693
摘要: Provided is a novel method for manufacturing a field effect transistor. Prior to forming an amorphous oxide layer on a substrate, ultraviolet rays are irradiated onto the substrate surface in an ozone atmosphere, plasma is irradiated onto the substrate surface, or the substrate surface is cleaned by a chemical solution containing hydrogen peroxide.
摘要翻译: 提供一种用于制造场效应晶体管的新颖方法。 在基板上形成无定形氧化物层之前,在臭氧气氛中将紫外线照射到基板表面上,将等离子体照射到基板表面上,或者通过含有过氧化氢的化学溶液清洁基板表面。
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公开(公告)号:US20100144089A1
公开(公告)日:2010-06-10
申请号:US12708601
申请日:2010-02-19
申请人: NOBUYUKI KAJI , HISATO YABUTA
发明人: NOBUYUKI KAJI , HISATO YABUTA
IPC分类号: H01L21/423
CPC分类号: H01L29/7869 , H01L21/02554 , H01L21/02565 , H01L21/02675 , H01L21/02689 , H01L21/3105 , H01L21/3115 , H01L21/428
摘要: A method for fabricating a device using an oxide semiconductor, including a process of forming the oxide semiconductor on a substrate and a process of changing the conductivity of the oxide semiconductor by irradiating a predetermined region thereof with an energy ray.
摘要翻译: 一种使用氧化物半导体的器件的制造方法,包括在衬底上形成氧化物半导体的工艺以及通过用能量射线照射其预定区域来改变氧化物半导体的导电性的工艺。
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公开(公告)号:US20080293208A1
公开(公告)日:2008-11-27
申请号:US12181579
申请日:2008-07-29
申请人: NOBUYUKI KAJI , HISATO YABUTA
发明人: NOBUYUKI KAJI , HISATO YABUTA
IPC分类号: H01L21/336
CPC分类号: H01L29/7869 , H01L21/02554 , H01L21/02565 , H01L21/02675 , H01L21/02689 , H01L21/3105 , H01L21/3115 , H01L21/428
摘要: A method for fabricating a device using an oxide semiconductor, including a process of forming the oxide semiconductor on a substrate and a process of changing the conductivity of the oxide semiconductor by irradiating a predetermined region thereof with an energy ray.
摘要翻译: 一种使用氧化物半导体的器件的制造方法,包括在衬底上形成氧化物半导体的工艺以及通过用能量射线照射其预定区域来改变氧化物半导体的导电性的工艺。
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公开(公告)号:US20070054507A1
公开(公告)日:2007-03-08
申请号:US11466950
申请日:2006-08-24
申请人: NOBUYUKI KAJI , HISATO YABUTA
发明人: NOBUYUKI KAJI , HISATO YABUTA
IPC分类号: H01L21/00
CPC分类号: H01L29/7869 , H01L21/02554 , H01L21/02565 , H01L21/02675 , H01L21/02689 , H01L21/3105 , H01L21/3115 , H01L21/428
摘要: A method for fabricating a device using an oxide semiconductor, including a process of forming the oxide semiconductor on a substrate and a process of changing the conductivity of the oxide semiconductor by irradiating a predetermined region thereof with an energy ray.
摘要翻译: 一种使用氧化物半导体的器件的制造方法,包括在衬底上形成氧化物半导体的工艺以及通过用能量射线照射其预定区域来改变氧化物半导体的导电性的工艺。
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