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公开(公告)号：US10032931B2
公开(公告)日：2018-07-24
申请号：US13243244
申请日：2011-09-23
申请人： Hideo Hosono , Masahiro Hirano , Hiromichi Ota , Toshio Kamiya , Kenji Nomura
发明人： Hideo Hosono , Masahiro Hirano , Hiromichi Ota , Toshio Kamiya , Kenji Nomura
IPC分类号： H01L29/26 , H01L29/786 , C23C14/00 , C23C14/08 , C23C14/28 , C23C14/34 , H01L21/02 , H01L27/12
摘要： A switching element of LCDs or organic EL displays which uses a thin film transistor device, includes: a drain electrode, a source electrode, a channel layer contacting the drain electrode and the source electrode, wherein the channel layer comprises indium-gallium-zinc oxide having a transparent, amorphous state of a composition equivalent to InGaO3(ZnO)m (wherein m is a natural number less than 6) in a crystallized state, and the channel layer has a semi-insulating property represented by an electron mobility of more than 1 cm2/(V·sec) and an electron carrier concentration is less than 1018/cm3, a gate electrode, and a gate insulating film positioned between the gate electrode and the channel layer.
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公开(公告)号：US20120171785A1
公开(公告)日：2012-07-05
申请号：US13417811
申请日：2012-03-12
申请人： Tomohiro Takamatsu , Junichi Watanabe , Ko Nakamura , Wensheng Wang , Naoyuki Sato , Aki Dote , Kenji Nomura , Yoshimasa Horii , Masaki Kurasawa , Kazuaki Takai
发明人： Tomohiro Takamatsu , Junichi Watanabe , Ko Nakamura , Wensheng Wang , Naoyuki Sato , Aki Dote , Kenji Nomura , Yoshimasa Horii , Masaki Kurasawa , Kazuaki Takai
IPC分类号： H01L21/02
CPC分类号： H01L28/65 , H01L21/31691 , H01L28/56
摘要： There are provided a capacitor lower electrode formed on an adhesive layer, whose surface roughness is 0.79 nm or less, and having a (111) orientation that is inclined from a perpendicular direction to an upper surface of a substrate by 2.3° or less, a ferroelectric layer having a structure the (111) orientation of which is inclined from the perpendicular direction to the upper surface of the substrate by 3.5° or less, and a capacitor upper electrode.
摘要翻译： 提供一种形成在粘合剂层上的电容器下电极，其表面粗糙度为0.79nm或更小，并且具有从垂直于衬底上表面的垂直方向倾斜2.3°或更小的（111）取向， 具有（111）取向从基板的垂直方向倾斜3.5°以下的结构的铁电体层和电容器上电极。
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公开(公告)号：US08084743B2
公开(公告)日：2011-12-27
申请号：US12164917
申请日：2008-06-30
申请人： Keishi Saito , Hideo Hosono , Toshio Kamiya , Kenji Nomura
发明人： Keishi Saito , Hideo Hosono , Toshio Kamiya , Kenji Nomura
IPC分类号： G01T1/24
CPC分类号： H01L31/032 , H01L27/14601 , H01L27/14632 , H01L27/14658 , H01L29/7869 , H01L31/02322 , H01L31/085 , H01L31/09 , H01L31/118
摘要： A sensor for detecting a received electromagnetic wave comprising a first electrode, a second electrode and an amorphous oxide layer interposed between the first electrode and the second electrode.
摘要翻译： 一种用于检测接收的电磁波的传感器，包括插在第一电极和第二电极之间的第一电极，第二电极和无定形氧化物层。
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4.发明申请FACSIMILE APPARATUS, FAILURE DETECTION METHOD, AND COMPUTER READABLE MEDIUM 审中-公开FACSIMILE装置，故障检测方法和计算机可读介质公开(公告)号：US20110216887A1
公开(公告)日：2011-09-08
申请号：US12881592
申请日：2010-09-14
申请人： Kenji NOMURA
发明人： Kenji NOMURA
摘要： A facsimile apparatus includes a first detecting unit and a second detecting unit. The a first detecting unit detects whether a facsimile communication is established or not with a communication destination in a prescribed time after a selection signal is sent to the communication destination with a communication line held. The second detecting unit detects a state of the communication line with the communication line held when the first detecting unit detects that a facsimile communication is not established.
摘要翻译： 传真装置包括第一检测单元和第二检测单元。 第一检测单元在通信线路保持通信线路向通信目的地发送选择信号之后，在规定的时间内检测是否与通信目的地建立传真通信。 当第一检测单元检测到传真通信未被建立时，第二检测单元检测与通信线路保持的通信线路的状态。
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公开(公告)号：US07791072B2
公开(公告)日：2010-09-07
申请号：US11269767
申请日：2005-11-09
申请人： Hideya Kumomi , Hideo Hosono , Toshio Kamiya , Kenji Nomura
发明人： Hideya Kumomi , Hideo Hosono , Toshio Kamiya , Kenji Nomura
IPC分类号： H01L31/20
CPC分类号： H01L29/7869 , G02F1/1368 , H01L27/14621 , H01L29/04
摘要： An active matrix display comprising a light control device and a field effect transistor for driving the light control device. The active layer of the field effect transistor comprises an amorphous.
摘要翻译： 一种有源矩阵显示器，包括用于驱动光控制装置的光控制装置和场效应晶体管。 场效应晶体管的有源层包括非晶体。
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6.发明授权Field effect transistor with amorphous oxide active layer containing microcrystals and gate electrode opposed to active layer through gate insulator 有权具有非晶氧化物活性层的场效应晶体管，其含有微晶体，栅电极通过栅极绝缘体与有源层相对公开(公告)号：US07601984B2
公开(公告)日：2009-10-13
申请号：US11269600
申请日：2005-11-09
申请人： Masafumi Sano , Katsumi Nakagawa , Hideo Hosono , Toshio Kamiya , Kenji Nomura
发明人： Masafumi Sano , Katsumi Nakagawa , Hideo Hosono , Toshio Kamiya , Kenji Nomura
IPC分类号： H01L29/04
CPC分类号： H01L29/78693 , H01L21/02422 , H01L21/02554 , H01L21/02565 , H01L21/02592 , H01L21/02631 , H01L21/428 , H01L27/1225 , H01L27/124 , H01L29/66969 , H01L29/7869 , H01L29/78696
摘要： A novel amorphous oxide applicable, for example, to an active layer of a TFT is provided. The amorphous oxide comprises microcrystals.
摘要翻译： 提供了可应用于例如TFT的有源层的新颖的无定形氧化物。 无定形氧化物包括微晶。
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公开(公告)号：US07535010B2
公开(公告)日：2009-05-19
申请号：US11937259
申请日：2007-11-08
申请人： Keishi Saito , Hideo Hosono , Toshio Kamiya , Kenji Nomura
发明人： Keishi Saito , Hideo Hosono , Toshio Kamiya , Kenji Nomura
IPC分类号： G01T1/24
CPC分类号： H01L31/032 , H01L27/14601 , H01L27/14632 , H01L27/14658 , H01L29/7869 , H01L31/02322 , H01L31/085 , H01L31/09 , H01L31/118
摘要： A sensor for detecting a received electromagnetic wave comprising a first electrode, a second electrode and an amorphous oxide layer interposed between the first electrode and the second electrode.
摘要翻译： 一种用于检测接收的电磁波的传感器，包括插在第一电极和第二电极之间的第一电极，第二电极和无定形氧化物层。
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公开(公告)号：US20080290286A1
公开(公告)日：2008-11-27
申请号：US12164917
申请日：2008-06-30
申请人： Keishi Saito , Hideo Hosono , Toshio Kamiya , Kenji Nomura
发明人： Keishi Saito , Hideo Hosono , Toshio Kamiya , Kenji Nomura
CPC分类号： H01L31/032 , H01L27/14601 , H01L27/14632 , H01L27/14658 , H01L29/7869 , H01L31/02322 , H01L31/085 , H01L31/09 , H01L31/118
摘要： A sensor for detecting a received electromagnetic wave comprising a first electrode, a second electrode and an amorphous oxide layer interposed between the first electrode and the second electrode.
摘要翻译： 一种用于检测接收的电磁波的传感器，包括插在第一电极和第二电极之间的第一电极，第二电极和无定形氧化物层。
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公开(公告)号：US20070194379A1
公开(公告)日：2007-08-23
申请号：US10592431
申请日：2005-02-28
申请人： Hideo Hosono , Masahiro Hirano , Hiromichi Ota , Toshio Kamiya , Kenji Nomura
发明人： Hideo Hosono , Masahiro Hirano , Hiromichi Ota , Toshio Kamiya , Kenji Nomura
IPC分类号： H01L27/12
CPC分类号： H01L29/78696 , C23C14/0021 , C23C14/086 , C23C14/28 , C23C14/3414 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L27/1225 , H01L29/7869 , H01L29/78693
摘要： The present invention relates to an amorphous oxide and a thin film transistor using the amorphous oxide. In particular, the present invention provides an amorphous oxide having an electron carrier concentration less than 1018/cm3, and a thin film transistor using such an amorphous oxide. In a thin film transistor having a source electrode 6, a drain electrode 5, a gate electrode 4, a gate insulating film 3, and a channel layer 2, an amorphous oxide having an electron carrier concentration less than 1018/cm3 is used in the channel layer 2.
摘要翻译： 本发明涉及使用该无定形氧化物的无定形氧化物和薄膜晶体管。 特别地，本发明提供了电子载流子浓度小于10/30/3的非晶氧化物，以及使用这种无定形氧化物的薄膜晶体管。 在具有源电极6，漏电极5，栅电极4，栅极绝缘膜3和沟道层2的薄膜晶体管中，电子载流子浓度小于10 18的非晶氧化物， 在通道层2中使用SUP> / cm 3 3。
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公开(公告)号：US07161200B2
公开(公告)日：2007-01-09
申请号：US11014810
申请日：2004-12-20
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113
CPC分类号： H01L27/016 , H01G4/1227 , H01G4/33 , H01L21/84 , H01L27/10852 , H01L27/11507 , H01L27/13 , H05K1/0231
摘要： A capacitive element which includes: a silicon substrate (base material) 1; a base insulating film 2 formed on the silicon substrate 1; and a capacitor Q constituted by forming a bottom electrode 4a, a capacitor dielectric film 5a and a top electrode 6a on the base insulating film 2. The capacitive element is characterized in that the capacitor dielectric film 5a is composed of a material with the formula (Ba1−y,Sry)mYpTiQO3+δ, where 0
摘要翻译： 一种电容元件，包括：硅基板（基材）1; 形成在硅基板1上的基极绝缘膜2; 以及通过在基底绝缘膜2上形成底部电极4a，电容器电介质膜5a和顶部电极6a构成的电容器Q。 电容元件的特征在于，电容器电介质膜5a由具有下式的材料构成：（Ba 1-y，Sr y） 其中0
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