公开(公告)号：US20200312603A1

公开(公告)日：2020-10-01

申请号：US16785373

申请日：2020-02-07

Applicant: HITACHI HIGH-TECH SCIENCE CORPORATION

Inventor： Tomokazu KOZAKAI ,  Yoshimi KAWANAMI ,  Hiroyuki MUTOH ,  Yoko NAKAJIMA ,  Hironori MORITANI ,  Shinichi MATSUBARA

IPC: H01J37/08 ,  H01J37/305 ,  H01J9/02 ,  H01J37/10

Abstract: A method of manufacturing an emitter is disclosed. The method enables a crystal structure of the tip of the front end of the emitter to return to its original state with high reproducibility by rearranging atoms in a treatment, and enables a long lasting emitter to be attained by suppressing extraction voltage rise after the treatment. As a method of manufacturing an emitter having a sharpened needle-shape, the method includes: performing an electropolishing process for the front end of an emitter material having conductivity to taper toward the front end; and performing an etching to make the number of atoms constituting the tip of the front end be a predetermined number or less by further sharpening the front end through an electric field-induced gas etching having constantly applied voltage, while observing the crystal structure of the front end, by a field ion microscope, in a sharp portion having the front end at its apex.

公开(公告)号：US20190267208A1

公开(公告)日：2019-08-29

申请号：US16280719

申请日：2019-02-20

Applicant: HITACHI HIGH-TECH SCIENCE CORPORATION

Inventor： Yoko NAKAJIMA ,  Yoshimi KAWANAMI ,  Hironori MORITANI ,  Hiroshi OBA

IPC: H01J9/02

Abstract: Disclosed is a method of manufacturing an emitter in which the tip of the emitter can be formed into a desired shape even when various materials are used for the emitter. The method includes performing an electrolytic polishing process of polishing a front end of a conductive emitter material so that a diameter of the front end is gradually reduced toward a tip; performing a first etching process by irradiating a processing portion of the emitter material processed by the electrolytic polishing process with a charged particle beam; performing a sputtering process by irradiating the pointed portion formed by the first etching process with a focused ion beam; and performing a secondary etching process of further sharpening the tip by an electric field induced gas etching processing while observing a crystal structure of the tip of the pointed portion processed by the sputtering process using a field ion microscope.