公开(公告)号：US20180308658A1

公开(公告)日：2018-10-25

申请号：US15935409

申请日：2018-03-26

Applicant: Hitachi High-Tech Science Corporation

Inventor： Shinichi MATSUBARA ,  Yoshimi KAWANAMI ,  Hiroyasu SHICHI

IPC: H01J37/08 ,  H01J37/28 ,  H01J37/153 ,  H01J37/10 ,  H01J37/147 ,  H01J37/22

CPC classification number: H01J37/08 ,  H01J37/10 ,  H01J37/147 ,  H01J37/153 ,  H01J37/222 ,  H01J37/28 ,  H01J2237/0807 ,  H01J2237/0822 ,  H01J2237/1532

Abstract: According to an embodiment of the present invention, an ion beam apparatus switches between an operation mode of performing irradiation with an ion beam most including H3+ ions and an operation mode of performing irradiation with an ion beam most including ions heavier than the H3+.

公开(公告)号：US20200312603A1

公开(公告)日：2020-10-01

申请号：US16785373

申请日：2020-02-07

Applicant: HITACHI HIGH-TECH SCIENCE CORPORATION

Inventor： Tomokazu KOZAKAI ,  Yoshimi KAWANAMI ,  Hiroyuki MUTOH ,  Yoko NAKAJIMA ,  Hironori MORITANI ,  Shinichi MATSUBARA

IPC: H01J37/08 ,  H01J37/305 ,  H01J9/02 ,  H01J37/10

Abstract: A method of manufacturing an emitter is disclosed. The method enables a crystal structure of the tip of the front end of the emitter to return to its original state with high reproducibility by rearranging atoms in a treatment, and enables a long lasting emitter to be attained by suppressing extraction voltage rise after the treatment. As a method of manufacturing an emitter having a sharpened needle-shape, the method includes: performing an electropolishing process for the front end of an emitter material having conductivity to taper toward the front end; and performing an etching to make the number of atoms constituting the tip of the front end be a predetermined number or less by further sharpening the front end through an electric field-induced gas etching having constantly applied voltage, while observing the crystal structure of the front end, by a field ion microscope, in a sharp portion having the front end at its apex.

公开(公告)号：US20190267208A1

公开(公告)日：2019-08-29

申请号：US16280719

申请日：2019-02-20

Applicant: HITACHI HIGH-TECH SCIENCE CORPORATION

Inventor： Yoko NAKAJIMA ,  Yoshimi KAWANAMI ,  Hironori MORITANI ,  Hiroshi OBA

IPC: H01J9/02

Abstract: Disclosed is a method of manufacturing an emitter in which the tip of the emitter can be formed into a desired shape even when various materials are used for the emitter. The method includes performing an electrolytic polishing process of polishing a front end of a conductive emitter material so that a diameter of the front end is gradually reduced toward a tip; performing a first etching process by irradiating a processing portion of the emitter material processed by the electrolytic polishing process with a charged particle beam; performing a sputtering process by irradiating the pointed portion formed by the first etching process with a focused ion beam; and performing a secondary etching process of further sharpening the tip by an electric field induced gas etching processing while observing a crystal structure of the tip of the pointed portion processed by the sputtering process using a field ion microscope.

公开(公告)号：US20180233319A1

公开(公告)日：2018-08-16

申请号：US15895492

申请日：2018-02-13

Applicant: HITACHI HIGH-TECH SCIENCE CORPORATION

Inventor： Yoshimi KAWANAMI

IPC: H01J37/08 ,  H01J37/20 ,  H01J37/10 ,  H01J37/147 ,  H01J37/28 ,  H01J37/244 ,  H01J37/09

Abstract: The focused ion beam apparatus includes: a vacuum container; an emitter tip disposed in the vacuum container and having a pointed front end; a gas field ion source; a focusing lens; a first deflector; a first aperture; an objective lens focusing the ion beam passing through the first deflector; and a sample stage. A signal generator responding to the ion beam in a point-shaped area is formed between the sample stage and an optical system including at least the focusing lens, the first aperture, the first deflector, and the objective lens, and a scanning field ion microscope image of the emitter tip is produced by matching a signal output from the signal generator and scanning of the ion beam by the first deflector with each other.

公开(公告)号：US20180012726A1

公开(公告)日：2018-01-11

申请号：US15635500

申请日：2017-06-28

Applicant: Hitachi High-Tech Science Corporation

Inventor： Hiroyasu SHICHI ,  Shinichi MATSUBARA ,  Yoshimi KAWANAMI

IPC: H01J37/08 ,  H01J37/18 ,  H01J37/26

CPC classification number: H01J37/08 ,  H01J37/18 ,  H01J37/261 ,  H01J2237/0807

Abstract: Provided is an ion beam system including a gas field ionization ion source which can obtain a high current sufficient for processing and stabilize an ion beam current. The ion beam system includes a gas field ionization ion source which includes: a vacuum vessel; an emitter tip holder disposed in the vacuum vessel; an emitter tip connected to the emitter tip holder; an extraction electrode opposed to the emitter tip; a gas supply portion for supplying a gas to the emitter tip; and a cold transfer member disposed in the vacuum vessel and transferring cold energy to the emitter tip holder. The cold transfer member has its surface covered with a heat insulating material in order to prevent the gas condensation.