公开(公告)号：US20190088452A1

公开(公告)日：2019-03-21

申请号：US15919682

申请日：2018-03-13

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Kazuya YAMADA ,  Koichi YAMAMOTO ,  Naoki YASUI ,  Norihiko IKEDA ,  Isao MORI

IPC: H01J37/32 ,  H01L21/67

Abstract: According to one embodiment, a plasma processing apparatus includes a processing chamber, a sample stage that is disposed inside the processing chamber and electrically divided into a plurality of regions on which a sample is placed, an electromagnetic wave introduction unit that introduces electromagnetic waves into the processing chamber, and a bias power applying unit that applies bias power to the sample stage, in which the bias power applying unit is configured to include a first radio frequency power applying unit that applies first radio frequency power to a first region out of the plurality of electrically divided regions of the sample stage, a second radio frequency power applying unit that applies second radio frequency power to a second region out of the plurality of electrically divided regions of the sample stage, and a phase adjuster that controls the first radio frequency power applying unit and the second radio frequency power applying unit to shift the phases of the first radio frequency power and the second radio frequency power by a predetermined amount.