公开(公告)号：US20180366335A1

公开(公告)日：2018-12-20

申请号：US16111853

申请日：2018-08-24

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Junya TANAKA ,  Tetsuo ONO

IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/67 ,  H01L21/3213 ,  H01L21/311

Abstract: Controllability of ion bombardment on a substrate is further improved to achieve uniformity of the etched substrate across the substrate surface.A plasma processing apparatus performs plasma generation and control of energy of ion bombardment on the substrate independently, generates plasma by continuous discharge or pulse discharge, and switches at least two bias powers having different frequencies, and alternately and repeatedly applies the at least two bias powers having different frequencies to a sample stage while the plasma is being generated.