公开(公告)号：US20140216657A1

公开(公告)日：2014-08-07

申请号：US13798270

申请日：2013-03-13

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Hironori KUSUMOTO ,  Yutaka OHMOTO ,  Kazunori NAKAMOTO ,  Koji NAGAI

IPC: H01L21/67

CPC classification number: H01J37/32724 ,  H01J37/32082 ,  H01J37/32192 ,  H01J37/32522 ,  H01J37/32825 ,  H01J2237/334 ,  H01L21/67069 ,  H01L21/67103 ,  H01L21/67248

Abstract: There is disclosed a plasma processing apparatus for processing a wafer put on a sample stage disposed in a processing chamber within a vacuum vessel by the use of a plasma generated in the processing chamber after mounting the wafer on the sample stage. The apparatus has heaters in areas of the interior of the sample stage which are divided radially and circumferentially. At least those of the heaters which are arranged in the areas located in the radially outer position include circumferentially arranged heater portions that are connected in series. The amounts of heat generated by these circumferentially arranged heater portions are adjusted.

Abstract translation: 公开了一种等离子体处理装置，其用于在将晶片安装在样品台上之后，通过使用在处理室中产生的等离子体来处理设置在真空容器内的处理室中的样品台上的晶片。 该装置在样品台内部的沿径向和周向划分的区域中具有加热器。 至少布置在位于径向外部位置的区域中的加热器包括串联连接的周向布置的加热器部分。 由这些周向布置的加热器部分产生的热量被调节。