公开(公告)号：US20180122651A1

公开(公告)日：2018-05-03

申请号：US15701692

申请日：2017-09-12

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Ryo ISHIMARU ,  Satoshi UNE ,  Masahito MORI

IPC: H01L21/3213 ,  H01L21/28

CPC classification number: H01L21/32136 ,  H01L21/28079 ,  H01L21/28123 ,  H01L21/28273 ,  H01L21/30621 ,  H01L21/31116

Abstract: A plasma etching method for etching a film containing a tungsten element using plasma, wherein the film containing a tungsten element is etched by using a gas containing a silicon element, a gas containing a halogen element, and a gas containing a carbon element and an oxygen element.