公开(公告)号：US20180068862A1

公开(公告)日：2018-03-08

申请号：US15558045

申请日：2017-01-31

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Satoshi TERAKURA ,  Masahito MORI ,  Takao ARASE ,  Taku IWASE

IPC: H01L21/3065 ,  H01L21/02 ,  H01L21/027 ,  H05H1/46

CPC classification number: H01L21/3065 ,  H01J37/32082 ,  H01J37/3244 ,  H01L21/0212 ,  H01L21/02129 ,  H01L21/0214 ,  H01L21/0276 ,  H01L21/31122 ,  H01L21/31144 ,  H05H1/46 ,  H05H2001/469

Abstract: The present invention provides a plasma processing method and a plasma processing apparatus. The plasma processing method enables consistent processing by realizing a high selectivity and a high etching rate when etching a laminated film using a boron-containing amorphous carbon film, realizes high throughput including prior and post processes by simplifying a mask forming process, and has shape controllability of vertical processing. In the present invention, in a plasma processing method for forming a mask by plasma-etching a laminated film including an amorphous carbon film containing boron, the boron-containing amorphous carbon film is plasma-etched by using a mixed gas of an oxygen gas, a fluorine-containing gas, a halogen gas, and a silicon tetrafluoride gas, or a mixed gas of an oxygen gas, a fluorine-containing gas, a halogen gas, and a silicon tetrachloride gas.

公开(公告)号：US20200227270A1

公开(公告)日：2020-07-16

申请号：US16482106

申请日：2018-10-26

Applicant: Hitachi High-Technologies Corporation

Inventor： Taku IWASE ,  Takao ARASE ,  Satoshi TERAKURA ,  Hayato WATANABE ,  Masahito MORI

IPC: H01L21/311 ,  H01L21/3213

Abstract: In order to implement a plasma etching method for improving a tapered shape, a plasma processing apparatus includes: a processing chamber in which a sample is subjected to plasma processing; a first radio frequency power source that supplies radio frequency power for generating a plasma; a sample stage on which the sample is placed; a second radio frequency power source that supplies radio frequency power to the sample stage; and a control unit that controls the first radio frequency power source and the second radio frequency power source so as to etch a stacked film formed by alternately stacking a silicon oxide film and a polycrystalline silicon, or a stacked film formed by alternately stacking a silicon oxide film and a silicon nitride film, by using a plasma generated by a mixed gas of a hydrogen bromide gas, a hydrofluorocarbon gas and a nitrogen element-containing gas.