公开(公告)号：US20180082825A1

公开(公告)日：2018-03-22

申请号：US15443488

申请日：2017-02-27

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Hayato WATANABE ,  Masahito MORI ,  Takao ARASE ,  Taku IWASE

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/3065 ,  B08B7/00 ,  B08B9/46

CPC classification number: H01J37/32853 ,  B08B7/0035 ,  B08B9/46 ,  H01J37/32009 ,  H01J37/3244 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/67069

Abstract: A plasma processing method for plasma-etching a sample in a metallic processing chamber includes etching the sample with a plasma; plasma-cleaning the processing chamber with a fluorine-containing gas after etching the sample; and plasma-processing the processing chamber with a gas containing sulfur and oxygen after plasma cleaning the processing chamber.

公开(公告)号：US20180040459A1

公开(公告)日：2018-02-08

申请号：US15425014

申请日：2017-02-06

Applicant: Hitachi High-Technologies Corporation

Inventor： Taku IWASE ,  Masahito MORI ,  Takao ARASE ,  Kenetsu YOKOGAWA

IPC: H01J37/32

CPC classification number: H01J37/32697 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32568 ,  H01J37/32669 ,  H01J37/32724 ,  H01J37/32871 ,  H01J2237/334

Abstract: Disclosed herein is a plasma processing apparatus including: a processing chamber in which a sample is to be processed using plasma; a radio-frequency power source that supplies radio-frequency power for producing the plasma; and a sample stage on which the sample is to be mounted, the plasma processing apparatus further including a control unit that performs control so that plasma is produced after applying a DC voltage for electrostatically attracting the sample to the sample stage to each of two electrodes placed on the sample stage, and a heat-transfer gas for adjusting a temperature of the sample is supplied to a back surface of the sample after production of the plasma.

公开(公告)号：US20150357210A1

公开(公告)日：2015-12-10

申请号：US14832239

申请日：2015-08-21

Applicant: Hitachi High-Technologies Corporation

Inventor： Masahito MORI ,  Akira HIRATA ,  Koichi YAMAMOTO ,  Takao ARASE

IPC: H01L21/67 ,  H01J37/32

CPC classification number: H01L21/67069 ,  H01J37/32091 ,  H01J37/32183 ,  H01J37/32926 ,  H01J37/3299

Abstract: There is provided a method for controlling a plasma processing apparatus that eliminates a preliminary study on a resonance point while maintaining a low contamination and a high uniformity even in multi-step etching. In a method for controlling a plasma processing apparatus including the step of adjusting a radio frequency bias current carried to a counter antenna electrode, the method includes the steps of: setting a reactance of a variable element to an initial value; detecting a bias current carried to the counter antenna electrode; searching for a maximum value of the detected electric current; and adjusting a value of the reactance of the variable element from the maximum value to the set value and then fixing the value.

Abstract translation: 提供了一种用于控制等离子体处理装置的方法，即使在多步骤蚀刻中，也能够在保持低污染和高均匀性的同时消除对共振点的初步研究。 在一种用于控制等离子体处理装置的方法中，包括调整携带到对侧天线电极的射频偏置电流的步骤，该方法包括以下步骤：将可变元件的电抗设定为初始值; 检测携带到所述对置天线电极的偏置电流; 搜索检测到的电流的最大值; 并将可变元件的电抗值从最大值调整到设定值，然后固定该值。

公开(公告)号：US20180068862A1

公开(公告)日：2018-03-08

申请号：US15558045

申请日：2017-01-31

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Satoshi TERAKURA ,  Masahito MORI ,  Takao ARASE ,  Taku IWASE

IPC: H01L21/3065 ,  H01L21/02 ,  H01L21/027 ,  H05H1/46

CPC classification number: H01L21/3065 ,  H01J37/32082 ,  H01J37/3244 ,  H01L21/0212 ,  H01L21/02129 ,  H01L21/0214 ,  H01L21/0276 ,  H01L21/31122 ,  H01L21/31144 ,  H05H1/46 ,  H05H2001/469

Abstract: The present invention provides a plasma processing method and a plasma processing apparatus. The plasma processing method enables consistent processing by realizing a high selectivity and a high etching rate when etching a laminated film using a boron-containing amorphous carbon film, realizes high throughput including prior and post processes by simplifying a mask forming process, and has shape controllability of vertical processing. In the present invention, in a plasma processing method for forming a mask by plasma-etching a laminated film including an amorphous carbon film containing boron, the boron-containing amorphous carbon film is plasma-etched by using a mixed gas of an oxygen gas, a fluorine-containing gas, a halogen gas, and a silicon tetrafluoride gas, or a mixed gas of an oxygen gas, a fluorine-containing gas, a halogen gas, and a silicon tetrachloride gas.

公开(公告)号：US20140102640A1

公开(公告)日：2014-04-17

申请号：US13953924

申请日：2013-07-30

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Ken'etsu YOKOGAWA ,  Masahito MORI ,  Takao ARASE

IPC: H01L21/02

Abstract: A plasma processing apparatus having a stable plasma generation under wide-ranging process conditions, and superior in uniformity and reproducibility, comprises an upper electrode 3 having gas supply through holes 6, a gas supply means and a lower electrode 1, wherein the gas supply means includes a plane-like member 4 having gas through holes 8 and a plane-like member 5 having gas through holes 10, and the gas supply through holes 6 and the gas through holes 8 are connected through a groove 7, and the gas through holes 8 and the gas through holes 10 are connected through a groove 9, and wherein the gas supply through holes 6, the gas through holes 8 and the gas through holes 10 are disposed at positions, different from each other on a plane.

Abstract translation: 在宽范围的工艺条件下具有稳定的等离子体生成并且均匀性和再现性优异的等离子体处理装置包括具有气体供应通孔6，气体供应装置和下部电极1的上部电极3，其中气体供应装置 包括具有气体通孔8的平面状构件4和具有气体通孔10的平面状构件5，气体供给通孔6和气体通孔8通过槽7连接，气体通孔 8和气体通孔10通过槽9连接，其中气体供应通孔6，气体通孔8和气体通孔10设置在平面上彼此不同的位置。

公开(公告)号：US20200227270A1

公开(公告)日：2020-07-16

申请号：US16482106

申请日：2018-10-26

Applicant: Hitachi High-Technologies Corporation

Inventor： Taku IWASE ,  Takao ARASE ,  Satoshi TERAKURA ,  Hayato WATANABE ,  Masahito MORI

IPC: H01L21/311 ,  H01L21/3213

Abstract: In order to implement a plasma etching method for improving a tapered shape, a plasma processing apparatus includes: a processing chamber in which a sample is subjected to plasma processing; a first radio frequency power source that supplies radio frequency power for generating a plasma; a sample stage on which the sample is placed; a second radio frequency power source that supplies radio frequency power to the sample stage; and a control unit that controls the first radio frequency power source and the second radio frequency power source so as to etch a stacked film formed by alternately stacking a silicon oxide film and a polycrystalline silicon, or a stacked film formed by alternately stacking a silicon oxide film and a silicon nitride film, by using a plasma generated by a mixed gas of a hydrogen bromide gas, a hydrofluorocarbon gas and a nitrogen element-containing gas.

公开(公告)号：US20190214235A1

公开(公告)日：2019-07-11

申请号：US16113913

申请日：2018-08-27

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Kenetsu YOKOGAWA ,  Masakazu ISOZAKI ,  Yousuke SAKAI ,  Masahito MORI ,  Takao ARASE

IPC: H01J37/32 ,  H01L21/683 ,  H01L21/687 ,  C23C4/02

CPC classification number: H01J37/32532 ,  C23C4/02 ,  H01J37/32082 ,  H01J37/32715 ,  H01L21/6833 ,  H01L21/6875

Abstract: Provided is a plasma processing apparatus in which a sample as a processing target placed and held on a sample stage is processed using plasma formed inside a processing chamber, the sample stage being disposed inside the processing chamber inside a vacuum chamber, wherein a plate-like member, which is disposed on the sample stage, constitutes a top surface placed with the sample, and is formed of a first dielectric, includes: an outer circumferential protruding portion disposed in a ring shape surrounding a central portion on the top surface of the plate-like member along an outer circumferential edge; a plurality of columnar projections which are arranged on the top surface of the plate-like member on the central side of the outer circumferential protruding portion; and a film formed of a second dielectric which covers the top surface of the plate-like member on the central side of the outer circumferential protruding portion, a top-portion top surface of the projections, and a top surface of the plate-like member excluding a sidewall surface extending from an outer circumferential edge of the top-portion top surface.

公开(公告)号：US20150020970A1

公开(公告)日：2015-01-22

申请号：US14508859

申请日：2014-10-07

Applicant: Hitachi High-Technologies Corporation

Inventor： Eiji IKEGAMI ,  Shoji IKUHARA ,  Takeshi SHIMADA ,  Kenichi KUWABARA ,  Takao ARASE ,  Tsuyoshi MATSUMOTO

IPC: H01J37/32 ,  H01L21/67

CPC classification number: H01J37/32963 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32192 ,  H01J37/32917 ,  H01J37/32926 ,  H01J37/32935 ,  H01J37/32981 ,  H01J37/3299 ,  H01J2237/1825 ,  H01J2237/327 ,  H01L21/67069 ,  H01L21/67242 ,  H05H1/46

Abstract: Plasma processing of plural substrates is performed in a plasma processing apparatus, which is provided with a plasma processing chamber having an antenna electrode and a lower electrode for placing and retaining the plural substrates in turn within the plasma processing chamber, a gas feeder for feeding processing gas into the processing chamber, a vacuum pump for discharging gas from the processing chamber via a vacuum valve, and a solenoid coil for forming a magnetic field within the processing chamber. At least one of the plural substrates is placed on the lower electrode, and the processing gas is fed into the processing chamber. RF power is fed to the antenna electrode via a matching network to produce a plasma within the processing chamber in which a magnetic field has been formed by the solenoid coil. This placing of at least one substrate and this feeding of the processing gas are then repeated until the plasma processing of all of the plural substrates is completed. An end of seasoning is determined when a parameter including an internal pressure of the processing chamber has become stable to a steady value with plasma processing time.

Abstract translation: 在具有等离子体处理室的等离子体处理装置中进行多个基板的等离子体处理，该等离子体处理室具有用于在等离子体处理室内依次放置和保持多个基板的天线电极和下部电极，供给处理用气体供给装置 气体进入处理室，用于经由真空阀从处理室排出气体的真空泵和用于在处理室内形成磁场的螺线管线圈。 多个基板中的至少一个被放置在下电极上，并且处理气体被馈送到处理室中。 RF功率经由匹配网络馈送到天线电极，以在处理室内产生等离子体，其中已经由螺线管线圈形成了磁场。 然后重复这种至少一个基板的放置和该处理气体的进料，直至完成所有多个基板的等离子体处理。 当包括处理室的内部压力的参数在具有等离子体处理时间的稳定值变得稳定时，确定调味品的结束。