公开(公告)号：US20200312658A1

公开(公告)日：2020-10-01

申请号：US16371502

申请日：2019-04-01

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Makoto MIURA ,  Yohei ISHII ,  Satoshi SAKAI ,  Kenji MAEDA

IPC: H01L21/02 ,  H01L29/165 ,  H01L29/66 ,  H01L29/78 ,  H01L27/092 ,  H01L21/8238 ,  H01L21/67 ,  H01L21/3065 ,  H01L21/033 ,  H01L29/10

Abstract: A manufacturing process of a semiconductor device including a SiGe channel can form a Si segregation layer for protecting the SiGe channel without damaging the SiGe channel. A manufacturing method of a semiconductor device includes: a first step for performing plasma processing on a semiconductor substrate having a silicon layer and a silicon germanium layer formed on the silicon layer under a first condition to expose the silicon germanium layer; and a second step for performing plasma processing on the semiconductor substrate under a second condition to segregate silicon on the surface of the exposed silicon germanium layer. The silicon germanium layer or layers lying adjacent to the silicon germanium layer can be etched under the first condition, hydrogen plasma processing is performed under the second condition, and the first step and the second step are executed in series in the same processing chamber of a plasma processing apparatus.