公开(公告)号：US20160177449A1

公开(公告)日：2016-06-23

申请号：US14973592

申请日：2015-12-17

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Takeshi OHMORI ,  Daisuke SATOU ,  Tatehito USUI ,  Satomi INOUE ,  Kenji MAEDA

IPC: C23C16/513

CPC classification number: H01J37/32917 ,  H01J37/32926 ,  H01J37/32972 ,  H01J37/3299

Abstract: A plasma apparatus of processing a wafer disposed in a processing chamber using plasma includes one window, another window, a light receiving unit, a light source, and an optical branching unit which is disposed between the light source and the other window, branches light emitted by the light source to an optical path toward the processing chamber and an optical path in other direction, and reflects light in the processing chamber from the other window, and a detection unit which detects the light having been emitted from the plasma and received by the light receiving unit using one branched light and other branched and reflected light. The apparatus processes the wafer according to a condition for the processing which is adjusted based on a result of the detection.

Abstract translation: 使用等离子体处理设置在处理室中的晶片的等离子体装置包括设置在光源和另一窗口之间的一个窗口，另一个窗口，光接收单元，光源和光分路单元， 通过光源到朝向处理室的光路和沿另一方向的光路，并且从另一窗口反射处理室中的光;以及检测单元，其检测从等离子体发射的光并由 光接收单元使用一个分支光和其他分支和反射光。 该装置根据基于检测结果调整的处理条件处理晶片。

公开(公告)号：US20140231015A1

公开(公告)日：2014-08-21

申请号：US14262466

申请日：2014-04-25

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Hiroyuki KOBAYASHI ,  Kenji MAEDA ,  Kenetsu YOKOGAWA ,  Masaru IZAWA ,  Tadamitsu KANEKIYO

IPC: H01J37/32

CPC classification number: H01J37/32449 ,  C23C16/455 ,  C23C16/50 ,  C23C16/503 ,  C23C16/505 ,  C23C16/509 ,  H01J37/32082 ,  H01J37/3244 ,  H01L21/3065 ,  Y10T137/0402

Abstract: The object of the invention is to provide a plasma processing apparatus having enhanced plasma processing uniformity. The plasma processing apparatus comprises a processing chamber 1, means 13 and 14 for supplying processing gas into the processing chamber, evacuation means 25 and 26 for decompressing the processing chamber 1, an electrode 4 on which an object 2 to be processed such as a wafer is placed, and an electromagnetic radiation power supply 5A, wherein at least two kinds of processing gases having different composition ratios of O2 or N2 are introduced into the processing chamber through different gas inlets so as to control the in-plane uniformity of the critical dimension while maintaining the in-plane uniformity of the process depth.

Abstract translation: 本发明的目的是提供具有增强的等离子体处理均匀性的等离子体处理装置。 等离子体处理装置包括处理室1，用于将处理气体供给到处理室中的装置13和14，用于对处理室1进行减压的抽空装置25和26，其上待处理物体2如晶片的电极4 以及电磁辐射电源5A，其中通过不同的气体入口将具有不同组成比的O 2或N 2的至少两种处理气体引入处理室，以便控制临界尺寸的面内均匀性 同时保持工艺深度的面内均匀性。

公开(公告)号：US20130267098A1

公开(公告)日：2013-10-10

申请号：US13864317

申请日：2013-04-17

Applicant: Hitachi High-Technologies Corporation

Inventor： Kenji MAEDA ,  Ken YOSHIOKA ,  Hiromichi KAWASAKI ,  Takahiro SHIMOMURA

IPC: H01L21/67 ,  H01L21/02

CPC classification number: H01J37/3211 ,  C23C16/45557 ,  C23C16/505 ,  C23C16/507 ,  C23C16/52 ,  H01J37/321 ,  H01J37/32155 ,  H01J37/32174 ,  H01J37/32183 ,  H01J37/32816 ,  H01L21/02 ,  H01L21/02041 ,  H01L21/02104 ,  H01L21/30 ,  H01L21/67017 ,  H01L21/67028 ,  H01L21/67034 ,  H01L21/67069

Abstract: A plasma processing apparatus is offered which has evacuable vacuum vessel, processing chamber disposed inside the vacuum vessel and having inside space in which plasma for processing sample to be processed is generated and in which the sample is placed, unit for supplying gas for plasma generation into processing chamber, vacuum evacuation unit for evacuating inside of processing chamber, helical resonator configured of helical resonance coil disposed outside the vacuum vessel and electrically grounded shield disposed outside the coil, RF power supply of variable frequency for supplying RF electric power in given range to the resonance coil, and frequency matching device capable of adjusting frequency of the RF power supply so as to minimize reflected RF power. The resonance coil has electrical length that is set to integral multiple of one wavelength at given frequency. The helical resonance coil has feeding point connected to ground potential using variable capacitive device.

公开(公告)号：US20200312658A1

公开(公告)日：2020-10-01

申请号：US16371502

申请日：2019-04-01

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Makoto MIURA ,  Yohei ISHII ,  Satoshi SAKAI ,  Kenji MAEDA

IPC: H01L21/02 ,  H01L29/165 ,  H01L29/66 ,  H01L29/78 ,  H01L27/092 ,  H01L21/8238 ,  H01L21/67 ,  H01L21/3065 ,  H01L21/033 ,  H01L29/10

Abstract: A manufacturing process of a semiconductor device including a SiGe channel can form a Si segregation layer for protecting the SiGe channel without damaging the SiGe channel. A manufacturing method of a semiconductor device includes: a first step for performing plasma processing on a semiconductor substrate having a silicon layer and a silicon germanium layer formed on the silicon layer under a first condition to expose the silicon germanium layer; and a second step for performing plasma processing on the semiconductor substrate under a second condition to segregate silicon on the surface of the exposed silicon germanium layer. The silicon germanium layer or layers lying adjacent to the silicon germanium layer can be etched under the first condition, hydrogen plasma processing is performed under the second condition, and the first step and the second step are executed in series in the same processing chamber of a plasma processing apparatus.

公开(公告)号：US20180269042A1

公开(公告)日：2018-09-20

申请号：US15982827

申请日：2018-05-17

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Takeshi OHMORI ,  Daisuke SATOU ,  Tatehito USUI ,  Satomi INOUE ,  Kenji MAEDA

IPC: H01J37/32

Abstract: A plasma apparatus of processing a wafer disposed in a processing chamber using plasma includes one window, another window, a light receiving unit, a light source, and an optical branching unit which is disposed between the light source and the other window, branches light emitted by the light source to an optical path toward the processing chamber and an optical path in other direction, and reflects light in the processing chamber from the other window, and a detection unit which detects the light having been emitted from the plasma and received by the light receiving unit using one branched light and other branched and reflected light. The apparatus processes the wafer according to a condition for the processing which is adjusted based on a result of the detection.

公开(公告)号：US20170018405A1

公开(公告)日：2017-01-19

申请号：US15210257

申请日：2016-07-14

Applicant: Hitachi High-Technologies Corporation

Inventor： Hiroyuki KOBAYASHI ,  Nobuya MIYOSHI ,  Kazunori SHINODA ,  Kenji MAEDA ,  Satoshi SAKAI ,  Masaru IZAWA

IPC: H01J37/32 ,  H01L21/67

CPC classification number: H01J37/321 ,  H01J37/32724 ,  H01J2237/334 ,  H01L21/31116 ,  H01L21/67115

Abstract: A plasma processing apparatus includes a processing chamber to be depressurized in a vacuum vessel with a sidewall made of a transparent or translucent dielectric material, a stage in the processing chamber to mount a wafer thereon, a coil disposed around an outer side of the sidewall and supplied with radio-frequency power for forming plasma above the stage in the processing chamber, a lamp disposed above the coil outside the vacuum vessel which radiates light onto the wafer, and a reflector disposed the coil and reflecting light to irradiate an inside of the processing chamber.

Abstract translation: 等离子体处理装置包括：处理室，其在具有由透明或半透明的电介质材料制成的侧壁的真空容器中被减压，处理室中的用于安装晶片的台，设置在侧壁的外侧的线圈， 提供用于在处理室中的级上形成等离子体的射频电力，设置在真空容器外部的线圈上方的灯，其将光辐射到晶片上;以及反射器，设置线圈并反射光以照射处理的内部 房间。

公开(公告)号：US20190237302A1

公开(公告)日：2019-08-01

申请号：US16378783

申请日：2019-04-09

Applicant: Hitachi High-Technologies Corporation

Inventor： Hiroyuki KOBAYASHI ,  Nobuya MIYOSHI ,  Kazunori SHINODA ,  Kenji MAEDA ,  Yutaka KOUZUMA ,  Satoshi SAKAl ,  Masaru IZAWA

IPC: H01J37/32 ,  H01L21/67

CPC classification number: H01J37/32449 ,  H01J37/32339 ,  H01J37/32422 ,  H01J37/32522 ,  H01J37/32724 ,  H01J2237/334 ,  H01L21/67069 ,  H01L21/67115 ,  H01L21/6719

Abstract: In a vacuum processing apparatus including: a vacuum container including a processing chamber therein; a plasma formation chamber; plate members being arranged between the processing chamber and the plasma formation chamber; and a lamp and a window member being arranged around the plate members, in order that a wafer and the plate members are heated by electromagnetic waves from the lamp, a bottom surface and a side surface of the window member is formed of a member transmitting the electromagnetic waves therethrough.

公开(公告)号：US20170229290A1

公开(公告)日：2017-08-10

申请号：US15072392

申请日：2016-03-17

Applicant: Hitachi High-Technologies Corporation

Inventor： Hiroyuki KOBAYASHI ,  Nobuya MIYOSHI ,  Kazunori SHINODA ,  Kenji MAEDA ,  Yutaka KOUZUMA ,  Satoshi SAKAl ,  Masaru IZAWA

IPC: H01J37/32 ,  H01L21/67

CPC classification number: H01J37/32449 ,  H01J37/32339 ,  H01J37/32422 ,  H01J37/32522 ,  H01J37/32724 ,  H01J2237/334 ,  H01L21/67069 ,  H01L21/67115 ,  H01L21/6719

Abstract: In a vacuum processing apparatus including: a vacuum container including a processing chamber therein; a plasma formation chamber; plate members being arranged between the processing chamber and the plasma formation chamber; and a lamp and a window member being arranged around the plate members, in order that a wafer and the plate members are heated by electromagnetic waves from the lamp, a bottom surface and a side surface of the window member is formed of a member transmitting the electromagnetic waves therethrough.

公开(公告)号：US20150221477A1

公开(公告)日：2015-08-06

申请号：US14603246

申请日：2015-01-22

Applicant: Hitachi High-Technologies Corporation

Inventor： Kenji MAEDA ,  Ken YOSHIOKA ,  Hiromichi KAWASAKI ,  Takahiro SHIMOMURA

IPC: H01J37/32 ,  C23C16/52 ,  H01L21/30 ,  H01L21/67 ,  H01L21/02 ,  C23C16/505 ,  C23C16/455

CPC classification number: H01J37/3211 ,  C23C16/45557 ,  C23C16/505 ,  C23C16/507 ,  C23C16/52 ,  H01J37/321 ,  H01J37/32155 ,  H01J37/32174 ,  H01J37/32183 ,  H01J37/32816 ,  H01L21/02 ,  H01L21/02041 ,  H01L21/02104 ,  H01L21/30 ,  H01L21/67017 ,  H01L21/67028 ,  H01L21/67034 ,  H01L21/67069

Abstract: A plasma processing apparatus is offered which has evacuable vacuum vessel, processing chamber disposed inside the vacuum vessel and having inside space in which plasma for processing sample to be processed is generated and in which the sample is placed, unit for supplying gas for plasma generation into processing chamber, vacuum evacuation unit for evacuating inside of processing chamber, helical resonator configured of helical resonance coil disposed outside the vacuum vessel and electrically grounded shield disposed outside the coil, RF power supply of variable frequency for supplying RF electric power in given range to the resonance coil, and frequency matching device capable of adjusting frequency of the RF power supply so as to minimize reflected RF power. The resonance coil has electrical length that is set to integral multiple of one wavelength at given frequency. The helical resonance coil has feeding point connected to ground potential using variable capacitive device.

Abstract translation: 提供了一种等离子体处理装置，其具有可抽真空的真空容器，处理室设置在真空容器的内部，并且具有内部空间，其中产生用于处理待处理样品的等离子体，其中放置样品，用于将等离子体产生的气体供应到 处理室，用于在处理室内抽真空的真空抽气单元，设置在真空容器外部的螺旋谐振线圈构成的螺旋谐振器和设置在线圈外部的电接地屏蔽，RF频率可变频率供给给定范围内的RF电力 谐振线圈和频率匹配装置，其能够调整RF电源的频率，以便使反射的RF功率最小化。 谐振线圈具有设定为给定频率的一个波长的整数倍的电长度。 螺旋谐振线圈使用可变电容器件将馈电点连接到地电位。