公开(公告)号：US20190214235A1

公开(公告)日：2019-07-11

申请号：US16113913

申请日：2018-08-27

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Kenetsu YOKOGAWA ,  Masakazu ISOZAKI ,  Yousuke SAKAI ,  Masahito MORI ,  Takao ARASE

IPC: H01J37/32 ,  H01L21/683 ,  H01L21/687 ,  C23C4/02

CPC classification number: H01J37/32532 ,  C23C4/02 ,  H01J37/32082 ,  H01J37/32715 ,  H01L21/6833 ,  H01L21/6875

Abstract: Provided is a plasma processing apparatus in which a sample as a processing target placed and held on a sample stage is processed using plasma formed inside a processing chamber, the sample stage being disposed inside the processing chamber inside a vacuum chamber, wherein a plate-like member, which is disposed on the sample stage, constitutes a top surface placed with the sample, and is formed of a first dielectric, includes: an outer circumferential protruding portion disposed in a ring shape surrounding a central portion on the top surface of the plate-like member along an outer circumferential edge; a plurality of columnar projections which are arranged on the top surface of the plate-like member on the central side of the outer circumferential protruding portion; and a film formed of a second dielectric which covers the top surface of the plate-like member on the central side of the outer circumferential protruding portion, a top-portion top surface of the projections, and a top surface of the plate-like member excluding a sidewall surface extending from an outer circumferential edge of the top-portion top surface.