公开(公告)号：US20160181118A1

公开(公告)日：2016-06-23

申请号：US14851691

申请日：2015-09-11

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Yutaka KUDOU ,  Tetsuo ONO

IPC: H01L21/311 ,  H01L21/02

CPC classification number: H01L21/31116 ,  H01J37/321

Abstract: A plasma processing method capable of controlling an etching rate of a SiN film and obtaining high selectivity to a SiO2 film and Si at the same time performs etch-back of a SiN film as a processing object of a film structure including a SiO2 film and the SiN film or a Si film and the SiN film on a surface of a substrate placed in a processing chamber by using inductively couple plasma formed in the processing chamber by supplying process gas including CHF3 or CF4 and O2 gas into the processing chamber inside a vacuum vessel and supplying RF power of 7-50 MHz to an induction coil surrounding an outer circumference of the processing chamber.

Abstract translation: 能够控制SiN膜的蚀刻速率并且同时获得对SiO 2膜和Si的高选择性的等离子体处理方法作为包括SiO 2膜的膜结构的处理对象的SiN膜进行蚀刻， SiN膜或Si膜，并且通过使用感应耦合在处理室中形成的等离子体将基板放置在处理室中的衬底表面上的SiN膜，通过将包括CHF 3或CF 4和O 2气体的工艺气体供应到真空容器内的处理室中 并将7-50MHz的RF功率提供给处理室外围的感应线圈。