公开(公告)号：US20170169897A1

公开(公告)日：2017-06-15

申请号：US15292417

申请日：2016-10-13

Applicant: HO-JUN LEE ,  SANG-HYUN JOO

Inventor： HO-JUN LEE ,  SANG-HYUN JOO

IPC: G11C16/34 ,  G11C16/16 ,  G11C16/08 ,  G11C16/26 ,  G11C16/04 ,  G11C16/10

CPC classification number: G11C16/3495 ,  G11C16/0483 ,  G11C16/08 ,  G11C16/10 ,  G11C16/16 ,  G11C16/26 ,  G11C16/3445 ,  G11C16/3459 ,  G11C29/021 ,  G11C29/028 ,  G11C29/12005 ,  G11C29/26 ,  G11C29/50004 ,  G11C2029/0409 ,  G11C2029/1202 ,  G11C2029/1204

Abstract: A method of operating a non-volatile memory device includes selecting a first select transistor from among a plurality of select transistors included in a NAND string, and performing a check operation on a first threshold voltage of the first select transistor. The check operation includes comparing the first threshold voltage with a first lower-limit reference voltage level, and performing a program operation on the first select transistor when the first threshold voltage is lower than the first lower-limit reference voltage level. When the first threshold voltage is equal to or higher than the first lower-limit reference voltage level, the check operation on the first threshold voltage is ended.