公开(公告)号：US12051577B2

公开(公告)日：2024-07-30

申请号：US18311491

申请日：2023-05-03

Applicant: SUMITOMO CHEMICAL COMPANY, LIMITED

Inventor： Masahiro Fujita ,  Koji Nishioka

IPC: H01J37/34 ,  C23C14/34

CPC classification number: H01J37/3417 ,  C23C14/3407 ,  H01J37/3432 ,  H01J37/3435 ,  H01J2237/332

Abstract: A sputtering target comprising:



a backing plate; and
a target material bonded via a bonding material to a bonding region of the backing plate, wherein
a bonding area of a bonding portion between the target material and the backing plate accounts for 97% or more of the area of the bonding region, and wherein
a maximum defect area of portions without the bonding material present between the target material and the backing plate accounts for 0.6% or less of the area of the bonding region.




The sputtering target enables manufacturing of the sputtering target in which the target material is hardly peeled off during sputtering.

公开(公告)号：US12009192B2

公开(公告)日：2024-06-11

申请号：US17322600

申请日：2021-05-17

Applicant: Starfire Industries LLC

Inventor： Thomas J. Houlahan, Jr. ,  Daniel P. Menet ,  Ian F. Haehnlein ,  Ivan A. Shchelkanov ,  Robert A. Stubbers ,  Brian E. Jurczyk

IPC: H01J37/34 ,  C23C14/34 ,  C23C14/35

CPC classification number: H01J37/3467 ,  C23C14/3485 ,  C23C14/35 ,  H01J37/3405 ,  H01J37/3417

Abstract: A system and associated method are described for depositing high-quality films for providing a coating on a three-dimensional surface such as an internal surface of a bellows structure. The system includes a magnetic array comprising multiple sets of magnets arranged to have Hall-Effect regions that run lengthwise along a sputter target. The system further includes an elongated sputtering electrode material tube surrounding the magnetic array comprising multiple sets of magnets arranged to have Hall-Effect regions that run lengthwise along the sputter target. During operation, the system generates and controls ion flux for direct current high-power impulse magnetron sputtering. During operation logic circuitry issues a control signal to control a kick pulse property of a sustained positive voltage kick pulse taken from the group consisting of: onset delay, amplitude and duration.

公开(公告)号：US20240084441A1

公开(公告)日：2024-03-14

申请号：US18132420

申请日：2023-04-10

Applicant: Samsung Display Co., Ltd.

Inventor： HYUNEOK SHIN ,  JOONYONG PARK

IPC: C23C14/34 ,  C23C14/08 ,  H01J37/34

CPC classification number: C23C14/3407 ,  C23C14/086 ,  H01J37/3417 ,  H01J37/3426 ,  H01J37/3435 ,  H01L27/1225

Abstract: A sputtering target includes a first target part and a second target part both including a metal oxide and adjacent to each other and a target dividing part disposed between a first target part and a second target part. The target dividing part includes a same metal element as a metal element included in a first target part and a second target part. Therefore, size and/or length of the sputtering target may be increased. Thus, efficiency of a manufacturing process of the sputtering target is improved and a manufacturing cost is reduced. In addition, even after a thin film is deposited on a target substrate using the sputtering target, stains caused by sputtering of non-uniform amounts of metal elements by location on the target substrate do not occur on a target substrate. In addition, the uniformity of a thin film deposited on a target substrate is secured by using the sputtering target. Thus, process quality of a sputtering process is improved.

公开(公告)号：US11821067B2

公开(公告)日：2023-11-21

申请号：US16860646

申请日：2020-04-28

Applicant: Canon Anelva Corporation

Inventor： Masahiro Atsumi

IPC: C23C14/32 ,  C23C14/56 ,  H01J37/32 ,  H01J37/34 ,  H01J27/08 ,  C23C14/54 ,  G11B5/84 ,  C23C14/50

CPC classification number: C23C14/325 ,  C23C14/505 ,  C23C14/54 ,  C23C14/568 ,  G11B5/8408 ,  H01J27/08 ,  H01J37/32055 ,  H01J37/32064 ,  H01J37/32614 ,  H01J37/32944 ,  H01J37/34 ,  H01J37/3417

Abstract: A deposition apparatus, which forms a film on a substrate, includes a rotation unit configured to rotate a target about a rotating axis; a striker configured to generate an arc discharge; a driving unit configured to drive the striker so as to make a close state which the striker closes to a side surface around the rotating axis of the target to generate the arc discharge; and a control unit configured to control rotation of the target by the rotation unit so as to change a facing position on the side surface of the target facing the striker in the close state.

公开(公告)号：US11664207B2

公开(公告)日：2023-05-30

申请号：US16531782

申请日：2019-08-05

Applicant: TOKYO ELECTRON LIMITED

Inventor： Masato Shinada ,  Hiroyuki Toshima

IPC: C23C14/34 ,  H01J37/34 ,  C23C14/50 ,  H01L21/67 ,  H01L21/677

CPC classification number: H01J37/3417 ,  C23C14/34 ,  C23C14/505 ,  H01J37/3429 ,  H01J37/3435 ,  H01J37/3447 ,  H01J2237/026 ,  H01J2237/20214 ,  H01J2237/20228 ,  H01J2237/332 ,  H01L21/67167 ,  H01L21/67196 ,  H01L21/67207 ,  H01L21/67742

Abstract: A film-forming apparatus comprises: a processing chamber defining a processing space, a first sputter-particle emitter and a second sputter-particle emitter having targets, respectively, from which sputter-particles are emitted in different oblique directions in the processing space, a sputter-particle blocking plate having a passage hole through which the sputter particles emitted from the first sputter-particle emitter and the second sputter-particle emitter pass, a substrate support configured to support a substrate and provided at a side opposite the first sputter-particle emitter and the second sputter-particle emitter with respect to the sputter-particle blocking plate in the processing space, a substrate moving mechanism configured to linearly move the substrate supported on the substrate support, and a controller configured to control the emission of sputter-particles from the first sputter-particle emitter and the second sputter-particle emitter while controlling the substrate moving mechanism to move the substrate linearly.

公开(公告)号：US20190252166A1

公开(公告)日：2019-08-15

申请号：US16341991

申请日：2017-10-03

Applicant: EVATEC AG

Inventor： Heinz Felzer ,  Dominik Jager ,  Michael Cheseaux ,  Hartmut Rohrmann

IPC: H01J37/34 ,  C23C14/08 ,  C23C14/35

CPC classification number: H01J37/3408 ,  C23C14/0068 ,  C23C14/08 ,  C23C14/086 ,  C23C14/352 ,  H01J37/3405 ,  H01J37/3417 ,  H01J37/3426 ,  H01J37/3438 ,  H01J37/3447 ,  H01J37/3452 ,  H01J37/3464 ,  H01J37/3473 ,  H01J2237/20214 ,  H01J2237/332

Abstract: A sputtering source includes two facing plate shaped targets and a magnet arrangement along each of the targets. An open coating outlet area from the reaction space between the targets is limited by facing rims of the two plate shaped targets. Catcher plates along each of the rims respectively project in a direction from the rims towards each other into the open coating outlet area, thereby restricting the open coating outlet area as limited by the mutually facing rims of the two plate shaped targets.

公开(公告)号：US20180245217A1

公开(公告)日：2018-08-30

申请号：US15901145

申请日：2018-02-21

Applicant: Ascentool, Inc.

Inventor： George Xinsheng Guo

IPC: C23C16/458 ,  C23C16/04 ,  C23C16/46 ,  C23C16/513

CPC classification number: C23C16/4587 ,  C23C14/044 ,  C23C14/352 ,  C23C16/04 ,  C23C16/042 ,  C23C16/45563 ,  C23C16/46 ,  C23C16/50 ,  C23C16/513 ,  H01J37/32715 ,  H01J37/32743 ,  H01J37/32779 ,  H01J37/32899 ,  H01J37/3417 ,  H01J37/3435 ,  H01J37/3447 ,  H01J37/345

Abstract: A high throughput deposition apparatus includes a process chamber, a plurality of targets that form a first closed loop in the process chamber, wherein the first closed loop includes a long dimension defined by at least a first pair of targets and a short dimension defined by at least a second pair of targets, a first substrate carrier assembly that can hold one or more substrates and configured to receive a deposition material from the plurality of targets in the first closed loop, and a transport mechanism that can move the first substrate carrier assembly along an axial direction through the first closed loop in the first process chamber.

公开(公告)号：US20180211825A1

公开(公告)日：2018-07-26

申请号：US15877430

申请日：2018-01-23

Applicant: MATERION CORPORATION

Inventor： Michael V. Pasquariello ,  Thomas P. St. Vincent ,  Matthew T. Willson ,  Richard J. Koba

IPC: H01J37/34 ,  H01J37/32 ,  C23C14/34 ,  G06K19/077

CPC classification number: H01J37/3405 ,  C23C14/3407 ,  G06K19/07749 ,  G06K19/07758 ,  G06K19/07773 ,  H01J37/32935 ,  H01J37/3417 ,  H01J37/3435 ,  H01J37/3476 ,  H01J37/3491

Abstract: A method for affixing an RFID tag to sputtering targets is disclosed. A cavity is formed on the back of the backing plate adjacent to the outer edge. Within the cavity, an RFID tag is secured with an encapsulant. The encapsulant is cured with the RFID tag capable of communicating with an associated reader through the encapsulant.

公开(公告)号：US10032872B2

公开(公告)日：2018-07-24

申请号：US14277508

申请日：2014-05-14

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki

IPC: H01L29/00 ,  H01L29/24 ,  H01L21/02 ,  H01L21/67 ,  H01J37/34 ,  C23C14/35 ,  C23C14/08 ,  C23C14/34 ,  C23C14/56 ,  H01J37/32 ,  H01L21/677 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L29/24 ,  C23C14/08 ,  C23C14/3464 ,  C23C14/35 ,  C23C14/351 ,  C23C14/56 ,  C23C14/564 ,  C23C14/566 ,  H01J37/32724 ,  H01J37/32899 ,  H01J37/3405 ,  H01J37/3417 ,  H01J37/3435 ,  H01J37/3447 ,  H01J37/3455 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/67017 ,  H01L21/6719 ,  H01L21/67196 ,  H01L21/67207 ,  H01L21/67748 ,  H01L29/66969 ,  H01L29/7869

Abstract: To manufacture a semiconductor device using an oxide semiconductor with high reliability and less variation in electrical characteristics, objects are to provide a method for manufacturing a semiconductor device with which an oxide semiconductor film with a fairly uniform thickness is formed, a manufacturing apparatus, and a method for manufacturing a semiconductor device with the manufacturing apparatus. In order to form an oxide semiconductor film with a fairly uniform thickness with use of a sputtering apparatus, an oxide semiconductor film the thickness uniformity of which is less than ±3%, preferably less than or equal to ±2% is formed by using a manufacturing apparatus in which a deposition chamber is set to have a reduced pressure atmosphere, preferably, to have a high degree of vacuum and power is adjusted to be applied uniformly to the entire surface of a substrate during film deposition.

公开(公告)号：US20180195163A1

公开(公告)日：2018-07-12

申请号：US15742180

申请日：2015-07-24

Applicant: Applied Materials, Inc.

Inventor： Helmut GRIMM ,  Thomas Werner ZILBAUER

IPC: C23C14/34 ,  C23C14/35 ,  C23C14/16 ,  H01J37/34

CPC classification number: C23C14/3407 ,  C23C14/165 ,  C23C14/35 ,  H01J37/3408 ,  H01J37/3417 ,  H01J37/3426 ,  H01J37/3435 ,  H01J37/3497

Abstract: A sputtering source is described. The sputtering source includes a backing support having a target receiving surface and a further surface opposing the target receiving surface, and at least one magnet assembly provided adjacent the further surface, wherein the target receiving surface of the backing support has at least one recess, wherein the recess is provided opposite to the magnet assembly.