-
1.
公开(公告)号:US10222546B2
公开(公告)日:2019-03-05
申请号:US15650372
申请日:2017-07-14
Inventor: Hee-Sun Yang , Jong-Hoon Kim , Bu-Yong Kim
Abstract: There are provided green-emitting quantum dots (QDs) including I-III-VI type ternary Cu—Ga—S core QDs and ZnS multishell wherein Cu:Ga is 1:10 to 1:1, and a fabricating method thereof. Integration of these QDs and red-emitting QDs into a blue LED leads to the fabrication of a white light-emitting device with high color rendering index. There are also provided blue-emitting QDs including I-III-VI type quaternary Zn—Cu—Ga—S or Cu—Ga—Al—S core QDs and ZnS multishell, and a fabricating method thereof. An electrically-driven blue light-emitting device with a QD emitting layer including these QDs interposed between a hole transport layer and an electron transport layer is fabricated.
-
公开(公告)号:US11186770B2
公开(公告)日:2021-11-30
申请号:US16555718
申请日:2019-08-29
Inventor: Hee-Sun Yang , Eun-Pyo Jang
Abstract: The present disclosure provides II-VI based non-Cd visible light emitting quantum dots (QDs) and a manufacturing method thereof to solve the problems with broad full width at half maximum (FWHM) and low quantum efficiency. The present disclosure further provides a QD light emitting diode (QLED) using the II-VI based non-Cd visible light emitting QDs. The QDs according to the present disclosure include a II-VI based ternary ZnSeTe core, wherein a Se:Te ratio in the ZnSeTe core is 1:10 to 100:1. According to the present disclosure, it is possible to provide QDs that emit visible light ranging from red to blue by adjusting the Se:Te ratio in the II-VI based ternary ZnSeTe core.
-
公开(公告)号:US11870004B2
公开(公告)日:2024-01-09
申请号:US16817162
申请日:2020-03-12
Inventor: Hee-Sun Yang , Chang-Yeol Han
IPC: H01L33/06 , H01L33/30 , H01L33/00 , H01L25/075 , B82Y20/00
CPC classification number: H01L33/00 , B82Y20/00 , H01L25/0753 , H01L33/0062 , H01L33/30 , H01L2933/0033
Abstract: The metal oxide nanoparticle includes a Zn-containing metal Me1 oxide nanoparticle of Zn1-xMe1xO (0≤x≤0.5) composition, and a metal Me2 ion surface treatment layer formed on a surface of the nanoparticle. Here, the metal Me1 is any one selected from Li, Be, Na, Mg, Al, K, Ca, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Ga, Ge, Rb, Sr, Zr, Nb, Mo, Ru, Rh, Pd, Ag, In, Sn, Sb, Ba and a combination thereof, and the metal Me2 is any one selected from Li, Be, Na, Mg, Al, K, Ca, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Ge, Rb, Sr, Zr, Nb, Mo, Ru, Rh, Pd, Ag, In, Sn, Sb, Ba and a combination thereof.
-
公开(公告)号:US11512253B2
公开(公告)日:2022-11-29
申请号:US16668634
申请日:2019-10-30
Inventor: Hee-Sun Yang , Jung-Ho Jo
Abstract: A method for fabricating quantum dots according to the present disclosure includes (a) synthesizing InP cores based on an aminophosphine type phosphorus (P) precursor, (b) size-sorting the InP cores, and (c) forming at least two shells on the size-sorted InP cores. In this instance, the size-sorting includes precipitating the InP cores with an addition of a dispersive solvent and a nondispersive solvent to the InP cores and separating the InP cores using a centrifugal separator, wherein the InP cores are separated in a descending order by size by performing iteration with a gradual increase in an amount of the nondispersive solvent.
-
-
-