公开(公告)号：US20240297271A1

公开(公告)日：2024-09-05

申请号：US18383125

申请日：2023-10-24

申请人： HUAIAN AUCKSUN OPTOELECTRONICS TECHNOLOGY CO., LTD

发明人： Tao Zhu ,  Changwei Song ,  Ling Lu

IPC分类号： H01L33/32 ,  H01L33/00 ,  H01L33/02 ,  H01L33/06

CPC分类号： H01L33/325 ,  H01L33/007 ,  H01L33/025 ,  H01L33/06

摘要： A light emitting diode epitaxial structure and a light emitting diode are provided. The light emitting diode epitaxial structure includes a substrate, and an N-type semiconductor layer, an intermediate layer, a multi-quantum well layer and a P-type semiconductor layer which are sequentially arranged on the substrate, wherein the intermediate layer is doped with a n-type impurity, and a doping concentration of the n-type impurity is ≤4×1018 atoms/cm3. In a specific implementation of the present disclosure, the n-type impurity is Si, and the intermediate layer is a GaN layer doped with Si.