公开(公告)号：US20240297271A1

公开(公告)日：2024-09-05

申请号：US18383125

申请日：2023-10-24

申请人： HUAIAN AUCKSUN OPTOELECTRONICS TECHNOLOGY CO., LTD

发明人： Tao Zhu ,  Changwei Song ,  Ling Lu

IPC分类号： H01L33/32 ,  H01L33/00 ,  H01L33/02 ,  H01L33/06

CPC分类号： H01L33/325 ,  H01L33/007 ,  H01L33/025 ,  H01L33/06

摘要： A light emitting diode epitaxial structure and a light emitting diode are provided. The light emitting diode epitaxial structure includes a substrate, and an N-type semiconductor layer, an intermediate layer, a multi-quantum well layer and a P-type semiconductor layer which are sequentially arranged on the substrate, wherein the intermediate layer is doped with a n-type impurity, and a doping concentration of the n-type impurity is ≤4×1018 atoms/cm3. In a specific implementation of the present disclosure, the n-type impurity is Si, and the intermediate layer is a GaN layer doped with Si.

公开(公告)号：US20230335679A1

公开(公告)日：2023-10-19

申请号：US18207240

申请日：2023-06-08

申请人： HUAIAN AUCKSUN OPTOELECTRONICS TECHNOLOGY CO., LTD

发明人： Changwei Song ,  Licheng Huang ,  Yuan Guo ,  Wang Zhan ,  Chih-Ching Cheng ,  Ling Lu

IPC分类号： H01L33/32 ,  H01L33/12 ,  H01L33/14 ,  H01L33/38 ,  H01L33/02 ,  H01L33/10

CPC分类号： H01L33/325 ,  H01L33/12 ,  H01L33/145 ,  H01L33/382 ,  H01L33/025 ,  H01L33/10

摘要： Provided are a light-emitting diode and a semiconductor device. The light-emitting diode comprises: a substrate; and a buffer layer, an N-type gallium nitride layer, a light-emitting region buffer layer, a first light-emitting layer, a second light-emitting layer, an electron blocking layer, and a P-type gallium nitride layer that are epitaxially grown on the substrate sequentially, wherein: the second light-emitting layer comprises one or more light-emitting well-barrier pair sub-layers; the thickness of the light-emitting region buffer layer is a preset first multiple of the thickness of the light-emitting well-barrier pair sub-layer; the thickness of the first light-emitting layer is a preset second multiple of the thickness of the light-emitting well-barrier pair sub-layer, the second multiple being less than the first multiple; and the thickness of the electron blocking layer is a preset third multiple of the thickness of the light-emitting well-barrier sub-layer, the third multiple being less than the first multiple.